Size effects on hopping conduction in Si nanocrystals

Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In this work, size effects on hopping conduction have been investigated for Si nanocrystal films. The measurement results fit a hopping percolation model well. Experimental results demonstrate that the nanocrystal dimensions influence on the hopping energy greatly via the activation energy and decay length. We also found that hopping energy can be reduced by H2 annealing treatment.

    Original languageEnglish
    Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
    Pages321-322
    Number of pages2
    DOIs
    Publication statusPublished - 2009 Dec 1
    Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
    Duration: 2008 Jul 272008 Aug 1

    Publication series

    NameAIP Conference Proceedings
    Volume1199
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Other

    Other29th International Conference on Physics of Semiconductors, ICPS 29
    CountryBrazil
    CityRio de Janeiro
    Period08/7/2708/8/1

    Keywords

    • Hopping conduction
    • Nanocrystal
    • Size effect

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Zhou, X., Uchida, K., Mizuta, H., & Oda, S. (2009). Size effects on hopping conduction in Si nanocrystals. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 321-322). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295431