Size parameter effect of dielectric small particle mediated nano-hole patterning on silicon wafer by femtosecond laser

Tetsuo Sakai, Yuto Tanaka, Yuji Nishizawa, Mitsuhiro Terakawa, Minoru Obara

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

By use of a polystyrene particle with a fundamental (800 nm) and a second-harmonic (400 nm) wave of a femtosecond Ti:sapphire laser, nano-hole patterning properties on a silicon wafer were experimentally compared by keeping the size parameter constant.With the 800-nm wave, the patterned hole diameter ranged from 100 to 250 nm and the depth ranged from 20 to 100 nm. With the 400-nm wave, the hole diameter ranged from 50 to 200 nm while the depth ranged from 10 to 60 nm. The patterned diameter and the depth of patterned nano-holes were also controllable by the laser fluence. By the 3D finite-difference time-domain method it is numerically predicted that if the size parameter is kept at π approximately, the nano-hole patterning is efficiently performed even in the ultraviolet region of the spectrum.

Original languageEnglish
Pages (from-to)39-46
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume99
Issue number1
DOIs
Publication statusPublished - 2010 Apr

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Ultrashort pulses
Silicon wafers
Lasers
Aluminum Oxide
Finite difference time domain method
Polystyrenes
Sapphire

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Size parameter effect of dielectric small particle mediated nano-hole patterning on silicon wafer by femtosecond laser. / Sakai, Tetsuo; Tanaka, Yuto; Nishizawa, Yuji; Terakawa, Mitsuhiro; Obara, Minoru.

In: Applied Physics A: Materials Science and Processing, Vol. 99, No. 1, 04.2010, p. 39-46.

Research output: Contribution to journalArticle

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