Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system

Yoshifumi Nakamine, Naoki Inaba, Tetsuo Kodera, Ken Uchida, Rui N. Pereira, Andre R. Stegner, Martin S. Brandt, Martin Stutzman, Shunri Oda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

Original languageEnglish
Article number025002
JournalJapanese Journal of Applied Physics
Volume50
Issue number2
DOIs
Publication statusPublished - 2011 Feb
Externally publishedYes

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Plasma deposition
very high frequencies
Nanocrystals
phosphorus
Phosphorus
nanocrystals
Doping (additives)
Silicon
silicon
Plasmas
Atoms
Magnetic resonance measurement
atoms
Gases
gases
magnetic resonance
Electrons
electrons

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system. / Nakamine, Yoshifumi; Inaba, Naoki; Kodera, Tetsuo; Uchida, Ken; Pereira, Rui N.; Stegner, Andre R.; Brandt, Martin S.; Stutzman, Martin; Oda, Shunri.

In: Japanese Journal of Applied Physics, Vol. 50, No. 2, 025002, 02.2011.

Research output: Contribution to journalArticle

Nakamine, Y, Inaba, N, Kodera, T, Uchida, K, Pereira, RN, Stegner, AR, Brandt, MS, Stutzman, M & Oda, S 2011, 'Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system', Japanese Journal of Applied Physics, vol. 50, no. 2, 025002. https://doi.org/10.1143/JJAP.50.025002
Nakamine, Yoshifumi ; Inaba, Naoki ; Kodera, Tetsuo ; Uchida, Ken ; Pereira, Rui N. ; Stegner, Andre R. ; Brandt, Martin S. ; Stutzman, Martin ; Oda, Shunri. / Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 2.
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AU - Pereira, Rui N.

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AU - Brandt, Martin S.

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