Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system

Yoshifumi Nakamine, Naoki Inaba, Tetsuo Kodera, Ken Uchida, Rui N. Pereira, Andre R. Stegner, Martin S. Brandt, Martin Stutzman, Shunri Oda

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    16 Citations (Scopus)

    Abstract

    In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

    Original languageEnglish
    Article number025002
    JournalJapanese journal of applied physics
    Volume50
    Issue number2
    DOIs
    Publication statusPublished - 2011 Feb

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Nakamine, Y., Inaba, N., Kodera, T., Uchida, K., Pereira, R. N., Stegner, A. R., Brandt, M. S., Stutzman, M., & Oda, S. (2011). Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system. Japanese journal of applied physics, 50(2), [025002]. https://doi.org/10.1143/JJAP.50.025002