Abstract
The dynamics of free carriers in polycrystalline CuIn1-xGaxSe2 (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.
| Original language | English |
|---|---|
| Article number | 195203 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 89 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2014 May 20 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Okano, M., Takabayashi, Y., Sakurai, T., Akimoto, K., Shibata, H., Niki, S., & Kanemitsu, Y. (2014). Slow intraband relaxation and localization of photogenerated carriers in CuIn1-x Gax Se2 thin films: Evidence for the existence of long-lived high-energy carriers. Physical Review B - Condensed Matter and Materials Physics, 89(19), [195203]. https://doi.org/10.1103/PhysRevB.89.195203