Slow intraband relaxation and localization of photogenerated carriers in CuIn1-x Gax Se2 thin films: Evidence for the existence of long-lived high-energy carriers

Makoto Okano, Yutaro Takabayashi, Takeaki Sakurai, Katsuhiro Akimoto, Hajime Shibata, Shigeru Niki, Yoshihiko Kanemitsu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The dynamics of free carriers in polycrystalline CuIn1-xGaxSe2 (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.

Original languageEnglish
Article number195203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number19
DOIs
Publication statusPublished - 2014 May 20
Externally publishedYes

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Thin films
Photoluminescence
thin films
photoluminescence
energy
Photons
photons
decay
excitation
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Slow intraband relaxation and localization of photogenerated carriers in CuIn1-x Gax Se2 thin films : Evidence for the existence of long-lived high-energy carriers. / Okano, Makoto; Takabayashi, Yutaro; Sakurai, Takeaki; Akimoto, Katsuhiro; Shibata, Hajime; Niki, Shigeru; Kanemitsu, Yoshihiko.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 19, 195203, 20.05.2014.

Research output: Contribution to journalArticle

@article{9169b422bfe342258236506faf635ea7,
title = "Slow intraband relaxation and localization of photogenerated carriers in CuIn1-x Gax Se2 thin films: Evidence for the existence of long-lived high-energy carriers",
abstract = "The dynamics of free carriers in polycrystalline CuIn1-xGaxSe2 (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.",
author = "Makoto Okano and Yutaro Takabayashi and Takeaki Sakurai and Katsuhiro Akimoto and Hajime Shibata and Shigeru Niki and Yoshihiko Kanemitsu",
year = "2014",
month = "5",
day = "20",
doi = "10.1103/PhysRevB.89.195203",
language = "English",
volume = "89",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

TY - JOUR

T1 - Slow intraband relaxation and localization of photogenerated carriers in CuIn1-x Gax Se2 thin films

T2 - Evidence for the existence of long-lived high-energy carriers

AU - Okano, Makoto

AU - Takabayashi, Yutaro

AU - Sakurai, Takeaki

AU - Akimoto, Katsuhiro

AU - Shibata, Hajime

AU - Niki, Shigeru

AU - Kanemitsu, Yoshihiko

PY - 2014/5/20

Y1 - 2014/5/20

N2 - The dynamics of free carriers in polycrystalline CuIn1-xGaxSe2 (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.

AB - The dynamics of free carriers in polycrystalline CuIn1-xGaxSe2 (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.

UR - http://www.scopus.com/inward/record.url?scp=84901478272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901478272&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.89.195203

DO - 10.1103/PhysRevB.89.195203

M3 - Article

AN - SCOPUS:84901478272

VL - 89

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195203

ER -