Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

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Abstract

An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

Original languageEnglish
Pages (from-to)368-369
Number of pages2
JournalElectronics Letters
Volume46
Issue number5
DOIs
Publication statusPublished - 2010 Mar 19

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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