Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, Hiroyuki Tsuda

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

Original languageEnglish
Pages (from-to)368-369
Number of pages2
JournalElectronics Letters
Volume46
Issue number5
DOIs
Publication statusPublished - 2010

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Phase change materials
Waveguides
Switches
Silicon
Laser pulses
Irradiation
Crystalline materials
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide. / Ikuma, Y.; Shoji, Y.; Kuwahara, M.; Wang, X.; Kintaka, K.; Kawashima, H.; Tanaka, D.; Tsuda, Hiroyuki.

In: Electronics Letters, Vol. 46, No. 5, 2010, p. 368-369.

Research output: Contribution to journalArticle

Ikuma, Y, Shoji, Y, Kuwahara, M, Wang, X, Kintaka, K, Kawashima, H, Tanaka, D & Tsuda, H 2010, 'Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide', Electronics Letters, vol. 46, no. 5, pp. 368-369. https://doi.org/10.1049/el.2010.3588
Ikuma, Y. ; Shoji, Y. ; Kuwahara, M. ; Wang, X. ; Kintaka, K. ; Kawashima, H. ; Tanaka, D. ; Tsuda, Hiroyuki. / Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide. In: Electronics Letters. 2010 ; Vol. 46, No. 5. pp. 368-369.
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