The three axis SOI capacitive accelerometer has been developed using silicon bulk micro- machining. The accelerometer has a glass-silicon structure measuring 2.8mm by 2.8mm by 1.0mm. The accelerometer has a 500μsilicon mass formed by dicing using a SOI substrate. The accelerometer structure was released by R.I.E. process so that the sensor did not break or stick to the substrate. This process promises high throughput and high yield. The accelerometer was assembled with a switched-capasitor circuit and the characteristics were evaluated. The typical characteristics are as follows; Acceleration range is ± 1.2G, sensitivity is 0.6V/G, cross-axis sensitivity is less than 7%.
- dicing saw
- three axis
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering