SOI tri-gate nanowire MOSFETs for ultra-low power LSI

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nanowire transistors (NW Tr.) are very promising for ultralow-power LSI [1-3]. However, Ion of reported 10nm-size NW Tr., essential for 10nm-Lg scaling, is relatively low due to large parasitic resistance (RSD) and immature performance boosters. Also, dynamic power control using substrate bias (Vsub) and circuit performance under low-V dd operation have not been sufficiently explored yet in NW Tr.

Original languageEnglish
Title of host publicationProceedings - IEEE International SOI Conference
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States
Duration: 2012 Oct 12012 Oct 4

Other

Other2012 IEEE International SOI Conference, SOI 2012
CountryUnited States
CityNapa, CA
Period12/10/112/10/4

Fingerprint

Nanowires
Transistors
Power control
Ions
Networks (circuits)
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Saitoh, M., Ota, K., Tanaka, C., Uchida, K., & Numata, T. (2012). SOI tri-gate nanowire MOSFETs for ultra-low power LSI. In Proceedings - IEEE International SOI Conference [6404396] https://doi.org/10.1109/SOI.2012.6404396

SOI tri-gate nanowire MOSFETs for ultra-low power LSI. / Saitoh, Masumi; Ota, Kensuke; Tanaka, Chika; Uchida, Ken; Numata, Toshinori.

Proceedings - IEEE International SOI Conference. 2012. 6404396.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saitoh, M, Ota, K, Tanaka, C, Uchida, K & Numata, T 2012, SOI tri-gate nanowire MOSFETs for ultra-low power LSI. in Proceedings - IEEE International SOI Conference., 6404396, 2012 IEEE International SOI Conference, SOI 2012, Napa, CA, United States, 12/10/1. https://doi.org/10.1109/SOI.2012.6404396
Saitoh M, Ota K, Tanaka C, Uchida K, Numata T. SOI tri-gate nanowire MOSFETs for ultra-low power LSI. In Proceedings - IEEE International SOI Conference. 2012. 6404396 https://doi.org/10.1109/SOI.2012.6404396
Saitoh, Masumi ; Ota, Kensuke ; Tanaka, Chika ; Uchida, Ken ; Numata, Toshinori. / SOI tri-gate nanowire MOSFETs for ultra-low power LSI. Proceedings - IEEE International SOI Conference. 2012.
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