Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

Keisuke Yamamoto, Shinobu Fujihara, Toshio Kimura

Research output: Contribution to journalArticle

Abstract

A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

Original languageEnglish
Pages (from-to)259-262
Number of pages4
JournalKey Engineering Materials
Volume228-229
Publication statusPublished - 2002

Fingerprint

Trifluoroacetic Acid
Silicon
Oxides
Sol-gels
Processing
Substrates
Trifluoroacetic acid
Heating
Fluorine
Silicon oxides
Fluorides
Air

Keywords

  • Fluoride
  • Lanthanum Oxide
  • Oxyfluoride
  • Thin Film

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemical Engineering (miscellaneous)

Cite this

Sol-gel processing of oxide gate insulator from trifluoroacetate precursors. / Yamamoto, Keisuke; Fujihara, Shinobu; Kimura, Toshio.

In: Key Engineering Materials, Vol. 228-229, 2002, p. 259-262.

Research output: Contribution to journalArticle

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