Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka; Kodai Iijima; Ryota Sawada; Naoto Sugiyama; Yasuaki Kiyota; Fumihiko Kannari

doi:10.1109/CLEOPR.2017.8118649

Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka, Kodai Iijima, Ryota Sawada, Naoto Sugiyama, Yasuaki Kiyota, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

Original language	English
Title of host publication	2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
Volume	2017-January
ISBN (Electronic)	9781509062904
DOIs	https://doi.org/10.1109/CLEOPR.2017.8118649
Publication status	Published - 2017 Nov 22
Event	2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 - Singapore, Singapore Duration: 2017 Jul 31 → 2017 Aug 4

Other

Other	2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
Country/Territory	Singapore
City	Singapore
Period	17/7/31 → 17/8/4

ASJC Scopus subject areas

Computer Networks and Communications
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1109/CLEOPR.2017.8118649

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Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. / Tanaka, Hiroki; Iijima, Kodai; Sawada, Ryota et al.
2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, H, Iijima, K, Sawada, R, Sugiyama, N, Kiyota, Y & Kannari, F 2017, Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. in 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017, Singapore, Singapore, 17/7/31. https://doi.org/10.1109/CLEOPR.2017.8118649

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abstract = "Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.",

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AU - Tanaka, Hiroki

AU - Iijima, Kodai

AU - Sawada, Ryota

AU - Sugiyama, Naoto

AU - Kiyota, Yasuaki

AU - Kannari, Fumihiko

PY - 2017/11/22

Y1 - 2017/11/22

N2 - Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

AB - Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

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ER -

Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

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