Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka, Kodai Iijima, Ryota Sawada, Naoto Sugiyama, Yasuaki Kiyota, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2017-January
ISBN (Electronic)9781509062904
DOIs
Publication statusPublished - 2017 Nov 22
Event2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 - Singapore, Singapore
Duration: 2017 Jul 312017 Aug 4

Other

Other2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
CountrySingapore
CitySingapore
Period17/7/3117/8/4

Fingerprint

Solid state lasers
solid state lasers
Semiconductor lasers
Laser mode locking
semiconductor lasers
locking
Lasers
Praseodymium
lasers
Q switched lasers
Pumping (laser)
Gallium nitride
Indium
praseodymium
Aluminum Oxide
gallium nitrides
Harmonic generation
Titanium
Sapphire
indium

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Tanaka, H., Iijima, K., Sawada, R., Sugiyama, N., Kiyota, Y., & Kannari, F. (2017). Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. In 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 (Vol. 2017-January, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2017.8118649

Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. / Tanaka, Hiroki; Iijima, Kodai; Sawada, Ryota; Sugiyama, Naoto; Kiyota, Yasuaki; Kannari, Fumihiko.

2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, H, Iijima, K, Sawada, R, Sugiyama, N, Kiyota, Y & Kannari, F 2017, Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. in 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017, Singapore, Singapore, 17/7/31. https://doi.org/10.1109/CLEOPR.2017.8118649
Tanaka H, Iijima K, Sawada R, Sugiyama N, Kiyota Y, Kannari F. Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. In 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4 https://doi.org/10.1109/CLEOPR.2017.8118649
Tanaka, Hiroki ; Iijima, Kodai ; Sawada, Ryota ; Sugiyama, Naoto ; Kiyota, Yasuaki ; Kannari, Fumihiko. / Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4
@inproceedings{266097ccaeaa4c1caf81685b322d8f0b,
title = "Solid-state lasers directly pumped by InGaN-based green and blue laser diodes",
abstract = "Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50{\%}. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.",
author = "Hiroki Tanaka and Kodai Iijima and Ryota Sawada and Naoto Sugiyama and Yasuaki Kiyota and Fumihiko Kannari",
year = "2017",
month = "11",
day = "22",
doi = "10.1109/CLEOPR.2017.8118649",
language = "English",
volume = "2017-January",
pages = "1--4",
booktitle = "2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

AU - Tanaka, Hiroki

AU - Iijima, Kodai

AU - Sawada, Ryota

AU - Sugiyama, Naoto

AU - Kiyota, Yasuaki

AU - Kannari, Fumihiko

PY - 2017/11/22

Y1 - 2017/11/22

N2 - Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

AB - Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

UR - http://www.scopus.com/inward/record.url?scp=85044224174&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044224174&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2017.8118649

DO - 10.1109/CLEOPR.2017.8118649

M3 - Conference contribution

AN - SCOPUS:85044224174

VL - 2017-January

SP - 1

EP - 4

BT - 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -