Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka, Kodai Iijima, Ryota Sawada, Naoto Sugiyama, Yasuaki Kiyota, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017
PublisherOSA - The Optical Society
VolumePart F122-CLEOPR 2017
ISBN (Electronic)9781557528209
Publication statusPublished - 2017 Jan 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017 - Singapore, Singapore
Duration: 2017 Jul 312017 Aug 4

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017
CountrySingapore
CitySingapore
Period17/7/3117/8/4

Fingerprint

Solid state lasers
Semiconductor lasers
Laser mode locking
Lasers
Praseodymium
Q switched lasers
Pumping (laser)
Gallium nitride
Indium
Aluminum Oxide
Harmonic generation
Titanium
Sapphire
Laser pulses
Diodes
Pumps
Wavelength

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this

Tanaka, H., Iijima, K., Sawada, R., Sugiyama, N., Kiyota, Y., & Kannari, F. (2017). Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017 (Vol. Part F122-CLEOPR 2017). [s1152] OSA - The Optical Society.

Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. / Tanaka, Hiroki; Iijima, Kodai; Sawada, Ryota; Sugiyama, Naoto; Kiyota, Yasuaki; Kannari, Fumihiko.

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017. Vol. Part F122-CLEOPR 2017 OSA - The Optical Society, 2017. s1152.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, H, Iijima, K, Sawada, R, Sugiyama, N, Kiyota, Y & Kannari, F 2017, Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017. vol. Part F122-CLEOPR 2017, s1152, OSA - The Optical Society, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017, Singapore, Singapore, 17/7/31.
Tanaka H, Iijima K, Sawada R, Sugiyama N, Kiyota Y, Kannari F. Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017. Vol. Part F122-CLEOPR 2017. OSA - The Optical Society. 2017. s1152
Tanaka, Hiroki ; Iijima, Kodai ; Sawada, Ryota ; Sugiyama, Naoto ; Kiyota, Yasuaki ; Kannari, Fumihiko. / Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017. Vol. Part F122-CLEOPR 2017 OSA - The Optical Society, 2017.
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N2 - Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

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