Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka, Kodai Iijima, Ryota Sawada, Naoto Sugiyama, Yasuaki Kiyota, Fumihiko Kannari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017
    PublisherOSA - The Optical Society
    VolumePart F122-CLEOPR 2017
    ISBN (Electronic)9781557528209
    Publication statusPublished - 2017 Jan 1
    EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017 - Singapore, Singapore
    Duration: 2017 Jul 312017 Aug 4

    Other

    OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2017
    CountrySingapore
    CitySingapore
    Period17/7/3117/8/4

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Mechanics of Materials

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