A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2004 Oct 1|
|Event||2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States|
Duration: 2004 Jun 15 → 2004 Jun 17
ASJC Scopus subject areas
- Electrical and Electronic Engineering