Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida, J. Koga

    Research output: Contribution to journalConference article

    136 Citations (Scopus)

    Abstract

    A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

    Original languageEnglish
    Pages (from-to)168-169
    Number of pages2
    JournalDigest of Technical Papers - Symposium on VLSI Technology
    Publication statusPublished - 2004 Oct 1
    Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
    Duration: 2004 Jun 152004 Jun 17

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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