Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida, J. Koga

    Research output: Contribution to journalConference articlepeer-review

    149 Citations (Scopus)

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    Engineering & Materials Science