TY - JOUR
T1 - Solvent vapor annealing for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) thin films toward transistor fabrication
AU - Chiang, Mark Yi Hsuan
AU - Kinoshita, Tomohiro
AU - Noda, Kei
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2020
Y1 - 2020
N2 - Solvent vapor annealing (SVA) was examined for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) thin films as the activate layer of top-contact, bottom-gate transistors. SVA with chlorobenzene vapor was performed on different types of PBTTT-C14 films; pristine films on SiO2, thermally-annealed films on SiO2, and thermally-annealed films on alkylsilane-modified SiO2. Solvent vapors penetrated into the PBTTT-C14 films and caused some similar effects as conventional post-thermal annealing, such as reduced molecular lamellae spacing and increased field-effect mobility. Additionally, the hole mobility of the thermally-annealed film on alkylsilane-modified SiO2 was increased by SVA with relatively shorter duration, even without any obvious shifts in lattice spacing and optical absorption bands of the films. This means that SVA only for the film surface and the upper part of the organic active layer may be effective for improving electrode contact interfaces in top-contact transistors. The roles of SVA for tailoring structures and field-effect carrier transport in PBTTT-C14 films are considered.
AB - Solvent vapor annealing (SVA) was examined for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) thin films as the activate layer of top-contact, bottom-gate transistors. SVA with chlorobenzene vapor was performed on different types of PBTTT-C14 films; pristine films on SiO2, thermally-annealed films on SiO2, and thermally-annealed films on alkylsilane-modified SiO2. Solvent vapors penetrated into the PBTTT-C14 films and caused some similar effects as conventional post-thermal annealing, such as reduced molecular lamellae spacing and increased field-effect mobility. Additionally, the hole mobility of the thermally-annealed film on alkylsilane-modified SiO2 was increased by SVA with relatively shorter duration, even without any obvious shifts in lattice spacing and optical absorption bands of the films. This means that SVA only for the film surface and the upper part of the organic active layer may be effective for improving electrode contact interfaces in top-contact transistors. The roles of SVA for tailoring structures and field-effect carrier transport in PBTTT-C14 films are considered.
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U2 - 10.7567/1347-4065/ab54e1
DO - 10.7567/1347-4065/ab54e1
M3 - Article
AN - SCOPUS:85082815921
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SD
M1 - SDDA02
ER -