Source/drain and gate engineering on Si nanowire transistors with reduced parasitic resistance and strained silicon channel

Toshinori Numata, Masumi Saitoh, Yukio Nakabayashi, Kensuke Ota, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Source/drain and gate engineering on Si nanowire transistors with reduced parasitic resistance and strained silicon channel'. Together they form a unique fingerprint.

    Engineering & Materials Science