Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

Nobuo Saito, Fumio Sato, Kuniharu Takizawa, Jun ichi Kusano, Hideyo Okumura, Tahito Aida, Toshiharu Saiki, Motoichi Ohtsu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number7 B
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Light emission
Electroluminescence
optical microscopes
p-n junctions
electroluminescence
near fields
Photoluminescence
Microscopes
Scanning
scanning
Substrates
light emission
injection
slopes
photoluminescence
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope. / Saito, Nobuo; Sato, Fumio; Takizawa, Kuniharu; Kusano, Jun ichi; Okumura, Hideyo; Aida, Tahito; Saiki, Toshiharu; Ohtsu, Motoichi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 7 B, 1997.

Research output: Contribution to journalArticle

@article{4cbc5fb89037443eaa550f1465f51812,
title = "Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope",
abstract = "Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.",
author = "Nobuo Saito and Fumio Sato and Kuniharu Takizawa and Kusano, {Jun ichi} and Hideyo Okumura and Tahito Aida and Toshiharu Saiki and Motoichi Ohtsu",
year = "1997",
language = "English",
volume = "36",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7 B",

}

TY - JOUR

T1 - Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

AU - Saito, Nobuo

AU - Sato, Fumio

AU - Takizawa, Kuniharu

AU - Kusano, Jun ichi

AU - Okumura, Hideyo

AU - Aida, Tahito

AU - Saiki, Toshiharu

AU - Ohtsu, Motoichi

PY - 1997

Y1 - 1997

N2 - Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

AB - Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

UR - http://www.scopus.com/inward/record.url?scp=0031192892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031192892&partnerID=8YFLogxK

M3 - Article

VL - 36

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 B

ER -