Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

Nobuo Saito; Fumio Sato; Kuniharu Takizawa; Jun ichi Kusano; Hideyo Okumura; Tahito Aida; Toshiharu Saiki; Motoichi Ohtsu

doi:10.1143/jjap.36.l896

Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

Nobuo Saito, Fumio Sato, Kuniharu Takizawa, Jun ichi Kusano, Hideyo Okumura, Tahito Aida, Toshiharu Saiki, Motoichi Ohtsu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

Original language	English
Pages (from-to)	L896-L898
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	7 B
DOIs	https://doi.org/10.1143/jjap.36.l896
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Saito, N., Sato, F., Takizawa, K., Kusano, J. I., Okumura, H., Aida, T., Saiki, T., & Ohtsu, M. (1997). Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope. Japanese Journal of Applied Physics, Part 2: Letters, 36(7 B), L896-L898. https://doi.org/10.1143/jjap.36.l896

Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope. / Saito, Nobuo; Sato, Fumio; Takizawa, Kuniharu et al.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 7 B, 1997, p. L896-L898.

Research output: Contribution to journal › Article › peer-review

Saito, N, Sato, F, Takizawa, K, Kusano, JI, Okumura, H, Aida, T, Saiki, T & Ohtsu, M 1997, 'Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope', Japanese Journal of Applied Physics, Part 2: Letters, vol. 36, no. 7 B, pp. L896-L898. https://doi.org/10.1143/jjap.36.l896

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abstract = "Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.",

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AU - Saito, Nobuo

AU - Sato, Fumio

AU - Takizawa, Kuniharu

AU - Kusano, Jun ichi

AU - Okumura, Hideyo

AU - Aida, Tahito

AU - Saiki, Toshiharu

AU - Ohtsu, Motoichi

PY - 1997

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AB - Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

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Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

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