Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope

T. Saiki, S. Mononobe, M. Ohtsu, N. Saito, J. Kusano

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An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995 Dec 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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