Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope

Toshiharu Saiki, S. Mononobe, M. Ohtsu, N. Saito, J. Kusano

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The spatially resolved spectroscopy of lateral p-n junctions on a patterned GaAs substrate is demonstrated via photon scanning tunneling microscope. The profile of the conduction type in the junction is clarified, relating it to the surface structures. The illumination-collection hybrid mode, whose resolution is not limited by the carrier diffusion, is also used to obtain the higher-resolution 2-D imaging of emission efficiency in the vicinity of the p-n junction.

Original languageEnglish
Pages (from-to)2191-2193
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number15
DOIs
Publication statusPublished - 1995 Oct 9
Externally publishedYes

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p-n junctions
microscopes
photoluminescence
scanning
photons
spectroscopy
illumination
conduction
high resolution
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope. / Saiki, Toshiharu; Mononobe, S.; Ohtsu, M.; Saito, N.; Kusano, J.

In: Applied Physics Letters, Vol. 67, No. 15, 09.10.1995, p. 2191-2193.

Research output: Contribution to journalArticle

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