Spice-based performance analysis of ultra-low voltage Si nanowire CMOS circuits

Chika Tanaka, Masumi Saitoh, Kensuke Ota, Ken Uchida, Toshinori Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    An ultra-low voltage performance of nanowire-transistors-based CMOS circuits is investigated using the Spice model parameters. All Spice model parameters of BSIM4 are extracted from measurement data of nanowire transistors fabricated on 300 mm SOI wafer. The delay time and the power consumption of NW-Tr.-based and bulk-Tr.-based CMOS circuits are examined. The operation voltage of NW-Tr.-based inverter is reduced 300 mV smaller than that of bulk-Tr.-based inverter due to the ideal sub-threshold slope. The performance benefits of NW-Tr.-based stacked circuit and SRAM cell are measured in terms of ultra-low voltage and ultra-low power operation.

    Original languageEnglish
    Title of host publicationESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
    Pages159-162
    Number of pages4
    DOIs
    Publication statusPublished - 2011 Dec 12
    Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
    Duration: 2011 Sep 122011 Sep 16

    Publication series

    NameEuropean Solid-State Device Research Conference
    ISSN (Print)1930-8876

    Other

    Other41st European Solid-State Device Research Conference, ESSDERC 2011
    CountryFinland
    CityHelsinki
    Period11/9/1211/9/16

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

    Cite this

    Tanaka, C., Saitoh, M., Ota, K., Uchida, K., & Numata, T. (2011). Spice-based performance analysis of ultra-low voltage Si nanowire CMOS circuits. In ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference (pp. 159-162). [6044210] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2011.6044210