Spin current depolarization under high electric fields in undoped InGaAs

N. Okamoto; H. Kurebayashi; K. Harii; Y. Kajiwara; H. Beere; I. Farrer; T. Trypiniotis; K. Ando; D. A. Ritchie; C. H.W. Barnes; E. Saitoh

doi:10.1063/1.3599599

Spin current depolarization under high electric fields in undoped InGaAs

N. Okamoto, H. Kurebayashi, K. Harii, Y. Kajiwara, H. Beere, I. Farrer, T. Trypiniotis, K. Ando, D. A. Ritchie, C. H.W. Barnes, E. Saitoh

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Carrier spin polarization in In_0.13Ga_0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

Original language	English
Article number	242104
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3599599
Publication status	Published - 2011 Jun 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3599599

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@article{4832969a7e9b446482aa844cf68855c0,

title = "Spin current depolarization under high electric fields in undoped InGaAs",

abstract = "Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.",

author = "N. Okamoto and H. Kurebayashi and K. Harii and Y. Kajiwara and H. Beere and I. Farrer and T. Trypiniotis and K. Ando and Ritchie, {D. A.} and Barnes, {C. H.W.} and E. Saitoh",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current ” (Grant No. 19048028) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (Grant No. 21244058) from MEXT, Japan and a Grant for Industrial Technology Research from NEDO, Japan.",

year = "2011",

month = jun,

day = "13",

doi = "10.1063/1.3599599",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Spin current depolarization under high electric fields in undoped InGaAs

AU - Okamoto, N.

AU - Kurebayashi, H.

AU - Harii, K.

AU - Kajiwara, Y.

AU - Beere, H.

AU - Farrer, I.

AU - Trypiniotis, T.

AU - Ando, K.

AU - Ritchie, D. A.

AU - Barnes, C. H.W.

AU - Saitoh, E.

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current ” (Grant No. 19048028) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (Grant No. 21244058) from MEXT, Japan and a Grant for Industrial Technology Research from NEDO, Japan.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

AB - Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

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U2 - 10.1063/1.3599599

DO - 10.1063/1.3599599

M3 - Article

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242104

ER -

Spin current depolarization under high electric fields in undoped InGaAs

Abstract

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