Spin-dependent recombination at arsenic donors in ion-implanted silicon

David P. Franke, Manabu Otsuka, Takashi Matsuoka, Leonid S. Vlasenko, Marina P. Vlasenko, Martin S. Brandt, Kohei M Itoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination using microwave photoconductivity and electrically detected magnetic resonance monitoring the direct current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance, in particular, of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic sublevels can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

Original languageEnglish
Article number112111
JournalApplied Physics Letters
Volume105
Issue number11
DOIs
Publication statusPublished - 2014 Sep 15

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Franke, D. P., Otsuka, M., Matsuoka, T., Vlasenko, L. S., Vlasenko, M. P., Brandt, M. S., & Itoh, K. M. (2014). Spin-dependent recombination at arsenic donors in ion-implanted silicon. Applied Physics Letters, 105(11), [112111]. https://doi.org/10.1063/1.4896287