Spin-dependent recombination at arsenic donors in ion-implanted silicon

David P. Franke, Manabu Otsuka, Takashi Matsuoka, Leonid S. Vlasenko, Marina P. Vlasenko, Martin S. Brandt, Kohei M Itoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination using microwave photoconductivity and electrically detected magnetic resonance monitoring the direct current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance, in particular, of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic sublevels can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

Original languageEnglish
Article number112111
JournalApplied Physics Letters
Volume105
Issue number11
DOIs
Publication statusPublished - 2014 Sep 15

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arsenic
silicon
magnetic resonance
ions
forbidden transitions
photoconductivity
nuclear spin
electron spin
atomic energy levels
readout
ion implantation
implantation
direct current
microwaves
sensitivity
defects
oxygen
magnetic fields
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Franke, D. P., Otsuka, M., Matsuoka, T., Vlasenko, L. S., Vlasenko, M. P., Brandt, M. S., & Itoh, K. M. (2014). Spin-dependent recombination at arsenic donors in ion-implanted silicon. Applied Physics Letters, 105(11), [112111]. https://doi.org/10.1063/1.4896287

Spin-dependent recombination at arsenic donors in ion-implanted silicon. / Franke, David P.; Otsuka, Manabu; Matsuoka, Takashi; Vlasenko, Leonid S.; Vlasenko, Marina P.; Brandt, Martin S.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 105, No. 11, 112111, 15.09.2014.

Research output: Contribution to journalArticle

Franke, DP, Otsuka, M, Matsuoka, T, Vlasenko, LS, Vlasenko, MP, Brandt, MS & Itoh, KM 2014, 'Spin-dependent recombination at arsenic donors in ion-implanted silicon', Applied Physics Letters, vol. 105, no. 11, 112111. https://doi.org/10.1063/1.4896287
Franke DP, Otsuka M, Matsuoka T, Vlasenko LS, Vlasenko MP, Brandt MS et al. Spin-dependent recombination at arsenic donors in ion-implanted silicon. Applied Physics Letters. 2014 Sep 15;105(11). 112111. https://doi.org/10.1063/1.4896287
Franke, David P. ; Otsuka, Manabu ; Matsuoka, Takashi ; Vlasenko, Leonid S. ; Vlasenko, Marina P. ; Brandt, Martin S. ; Itoh, Kohei M. / Spin-dependent recombination at arsenic donors in ion-implanted silicon. In: Applied Physics Letters. 2014 ; Vol. 105, No. 11.
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