Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

P. A. Mortemousque, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G. Elliman, L. S. Vlasenko, Kohei M Itoh

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

Original languageEnglish
Article number082409
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
Publication statusPublished - 2012 Aug 20

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magnetic resonance spectroscopy
bismuth
silicon
magnetic fields
photoconductivity
magnetic resonance
electron paramagnetic resonance
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields. / Mortemousque, P. A.; Sekiguchi, T.; Culan, C.; Vlasenko, M. P.; Elliman, R. G.; Vlasenko, L. S.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 101, No. 8, 082409, 20.08.2012.

Research output: Contribution to journalArticle

Mortemousque, P. A. ; Sekiguchi, T. ; Culan, C. ; Vlasenko, M. P. ; Elliman, R. G. ; Vlasenko, L. S. ; Itoh, Kohei M. / Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields. In: Applied Physics Letters. 2012 ; Vol. 101, No. 8.
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