Spin-pump-induced spin transport in p-type Si at room temperature

Eiji Shikoh, Kazuya Ando, Kazuki Kubo, Eiji Saitoh, Teruya Shinjo, Masashi Shiraishi

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

Original languageEnglish
Article number127201
JournalPhysical review letters
Volume110
Issue number12
DOIs
Publication statusPublished - 2013 Mar 18
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Spin-pump-induced spin transport in p-type Si at room temperature'. Together they form a unique fingerprint.

  • Cite this