Spin-pump-induced spin transport in p-type Si at room temperature

Eiji Shikoh, Kazuya Ando, Kazuki Kubo, Eiji Saitoh, Teruya Shinjo, Masashi Shiraishi

Research output: Contribution to journalArticle

111 Citations (Scopus)

Abstract

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

Original languageEnglish
Article number127201
JournalPhysical Review Letters
Volume110
Issue number12
DOIs
Publication statusPublished - 2013 Mar 18
Externally publishedYes

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pumps
room temperature
silicon
ferromagnetic resonance
Hall effect
electric batteries
injection

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Spin-pump-induced spin transport in p-type Si at room temperature. / Shikoh, Eiji; Ando, Kazuya; Kubo, Kazuki; Saitoh, Eiji; Shinjo, Teruya; Shiraishi, Masashi.

In: Physical Review Letters, Vol. 110, No. 12, 127201, 18.03.2013.

Research output: Contribution to journalArticle

Shikoh, Eiji ; Ando, Kazuya ; Kubo, Kazuki ; Saitoh, Eiji ; Shinjo, Teruya ; Shiraishi, Masashi. / Spin-pump-induced spin transport in p-type Si at room temperature. In: Physical Review Letters. 2013 ; Vol. 110, No. 12.
@article{f7f3d5a87021402885418dd04c4fe65f,
title = "Spin-pump-induced spin transport in p-type Si at room temperature",
abstract = "A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.",
author = "Eiji Shikoh and Kazuya Ando and Kazuki Kubo and Eiji Saitoh and Teruya Shinjo and Masashi Shiraishi",
year = "2013",
month = "3",
day = "18",
doi = "10.1103/PhysRevLett.110.127201",
language = "English",
volume = "110",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Spin-pump-induced spin transport in p-type Si at room temperature

AU - Shikoh, Eiji

AU - Ando, Kazuya

AU - Kubo, Kazuki

AU - Saitoh, Eiji

AU - Shinjo, Teruya

AU - Shiraishi, Masashi

PY - 2013/3/18

Y1 - 2013/3/18

N2 - A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

AB - A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84875255002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875255002&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.110.127201

DO - 10.1103/PhysRevLett.110.127201

M3 - Article

AN - SCOPUS:84875255002

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

M1 - 127201

ER -