Spin-related tunneling in lithographically-defined silicon quantum dots

T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, S. Oda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
Publication statusPublished - 2010 Oct 22
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 2010 Jun 132010 Jun 14

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1310/6/14

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kodera, T., Yamahata, G., Kambara, T., Horibe, K., Uchida, K., Marcus, C. M., & Oda, S. (2010). Spin-related tunneling in lithographically-defined silicon quantum dots. In 2010 Silicon Nanoelectronics Workshop, SNW 2010 [5562576] (2010 Silicon Nanoelectronics Workshop, SNW 2010). https://doi.org/10.1109/SNW.2010.5562576