Spin-related tunneling in lithographically-defined silicon quantum dots

T. Kodera; G. Yamahata; T. Kambara; K. Horibe; K. Uchida; C. M. Marcus; S. Oda

doi:10.1109/SNW.2010.5562576

Spin-related tunneling in lithographically-defined silicon quantum dots

T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, S. Oda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562576
Publication status	Published - 2010 Oct 22
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States Duration: 2010 Jun 13 → 2010 Jun 14

Publication series

Name	2010 Silicon Nanoelectronics Workshop, SNW 2010

Other

Other	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/Territory	United States
City	Honolulu, HI
Period	10/6/13 → 10/6/14

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/SNW.2010.5562576

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Kodera, T, Yamahata, G, Kambara, T, Horibe, K, Uchida, K, Marcus, CM & Oda, S 2010, Spin-related tunneling in lithographically-defined silicon quantum dots. in 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562576, 2010 Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 10/6/13. https://doi.org/10.1109/SNW.2010.5562576

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author = "T. Kodera and G. Yamahata and T. Kambara and K. Horibe and K. Uchida and Marcus, {C. M.} and S. Oda",

year = "2010",

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doi = "10.1109/SNW.2010.5562576",

language = "English",

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AU - Kodera, T.

AU - Yamahata, G.

AU - Kambara, T.

AU - Horibe, K.

AU - Uchida, K.

AU - Marcus, C. M.

AU - Oda, S.

PY - 2010/10/22

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N2 - We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

AB - We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

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M3 - Conference contribution

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SN - 9781424477272

T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Spin-related tunneling in lithographically-defined silicon quantum dots

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