Sputter growth of chalcogenide superlattice films for future phase change memory applications

Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.

Original languageEnglish
Title of host publicationECS Transactions
EditorsS. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J.G. Park, G. Bersuker, H. Kubota, C. Hacker, Y.S. Obeng
PublisherElectrochemical Society Inc.
Pages49-54
Number of pages6
Edition3
ISBN (Print)9781510871632
DOIs
Publication statusPublished - 2018
Externally publishedYes
EventSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number3
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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