Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

Takaya Sugiura, Hiroki Miura, Nobuhiko Nakano

Research output: Contribution to journalArticlepeer-review

Abstract

This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated. The proposed sensor is an extension of a previously proposed RGB sensor designed on the standard CMOS process, and calculating the current ratio enables the detection of UV with high sensitivity. In addition, the use of current rectification eliminates the short to middle wavelength region and leaves only the Ir region which is used for detection. High dynamic ranges of 160 dB are ensured for all UV, Ir and RGB which they are excellent for color sensing. Consequently, combined with the previously proposed RGB sensing, the new RGB+UV+Ir sensor is realized without any filters.

Original languageEnglish
Article number7844905
JournalIEEE Photonics Journal
Volume14
Issue number4
DOIs
Publication statusPublished - 2022 Aug 1

Keywords

  • CMOS
  • device simulation
  • infrared
  • ultraviolet

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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