Storing quantum information for 30 seconds in a nanoelectronic device

Juha T. Muhonen, Juan P. Dehollain, Arne Laucht, Fay E. Hudson, Rachpon Kalra, Takeharu Sekiguchi, Kohei M Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Research output: Contribution to journalArticle

254 Citations (Scopus)

Abstract

The spin of an electron or a nucleus in a semiconductor1 naturally implements the unit of quantum information-the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices2. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms3, or charge and spin fluctuations arising from defects in oxides and interfaces4. For materials such as silicon, enrichment of the spin-zero 28Si isotope drastically reduces spin-bath decoherence5. Experiments on bulk spin ensembles in 28Si crystals have indeed demonstrated extraordinary coherence times6-8. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual 31P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28Si substrate. The 31P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy9 indicates that-contrary to widespread belief-it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

Original languageEnglish
Pages (from-to)986-991
Number of pages6
JournalNature Nanotechnology
Volume9
Issue number12
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Nanoelectronics
Electrons
Nanostructures
nuclear spin
Semiconductor materials
Spin fluctuations
Electronics industry
Silicon
Isotopes
electron spin
Oxides
solid state
Defects
Crystals
thermal noise
Substrates
proximity
baths
isotopes
Experiments

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Muhonen, J. T., Dehollain, J. P., Laucht, A., Hudson, F. E., Kalra, R., Sekiguchi, T., ... Morello, A. (2014). Storing quantum information for 30 seconds in a nanoelectronic device. Nature Nanotechnology, 9(12), 986-991. https://doi.org/10.1038/nnano.2014.211

Storing quantum information for 30 seconds in a nanoelectronic device. / Muhonen, Juha T.; Dehollain, Juan P.; Laucht, Arne; Hudson, Fay E.; Kalra, Rachpon; Sekiguchi, Takeharu; Itoh, Kohei M; Jamieson, David N.; McCallum, Jeffrey C.; Dzurak, Andrew S.; Morello, Andrea.

In: Nature Nanotechnology, Vol. 9, No. 12, 01.01.2014, p. 986-991.

Research output: Contribution to journalArticle

Muhonen, JT, Dehollain, JP, Laucht, A, Hudson, FE, Kalra, R, Sekiguchi, T, Itoh, KM, Jamieson, DN, McCallum, JC, Dzurak, AS & Morello, A 2014, 'Storing quantum information for 30 seconds in a nanoelectronic device', Nature Nanotechnology, vol. 9, no. 12, pp. 986-991. https://doi.org/10.1038/nnano.2014.211
Muhonen JT, Dehollain JP, Laucht A, Hudson FE, Kalra R, Sekiguchi T et al. Storing quantum information for 30 seconds in a nanoelectronic device. Nature Nanotechnology. 2014 Jan 1;9(12):986-991. https://doi.org/10.1038/nnano.2014.211
Muhonen, Juha T. ; Dehollain, Juan P. ; Laucht, Arne ; Hudson, Fay E. ; Kalra, Rachpon ; Sekiguchi, Takeharu ; Itoh, Kohei M ; Jamieson, David N. ; McCallum, Jeffrey C. ; Dzurak, Andrew S. ; Morello, Andrea. / Storing quantum information for 30 seconds in a nanoelectronic device. In: Nature Nanotechnology. 2014 ; Vol. 9, No. 12. pp. 986-991.
@article{b5da7a11253e452c8f7d21a60deb0aa4,
title = "Storing quantum information for 30 seconds in a nanoelectronic device",
abstract = "The spin of an electron or a nucleus in a semiconductor1 naturally implements the unit of quantum information-the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices2. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms3, or charge and spin fluctuations arising from defects in oxides and interfaces4. For materials such as silicon, enrichment of the spin-zero 28Si isotope drastically reduces spin-bath decoherence5. Experiments on bulk spin ensembles in 28Si crystals have indeed demonstrated extraordinary coherence times6-8. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual 31P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28Si substrate. The 31P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99{\%} control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy9 indicates that-contrary to widespread belief-it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.",
author = "Muhonen, {Juha T.} and Dehollain, {Juan P.} and Arne Laucht and Hudson, {Fay E.} and Rachpon Kalra and Takeharu Sekiguchi and Itoh, {Kohei M} and Jamieson, {David N.} and McCallum, {Jeffrey C.} and Dzurak, {Andrew S.} and Andrea Morello",
year = "2014",
month = "1",
day = "1",
doi = "10.1038/nnano.2014.211",
language = "English",
volume = "9",
pages = "986--991",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "Nature Publishing Group",
number = "12",

}

TY - JOUR

T1 - Storing quantum information for 30 seconds in a nanoelectronic device

AU - Muhonen, Juha T.

AU - Dehollain, Juan P.

AU - Laucht, Arne

AU - Hudson, Fay E.

AU - Kalra, Rachpon

AU - Sekiguchi, Takeharu

AU - Itoh, Kohei M

AU - Jamieson, David N.

AU - McCallum, Jeffrey C.

AU - Dzurak, Andrew S.

AU - Morello, Andrea

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The spin of an electron or a nucleus in a semiconductor1 naturally implements the unit of quantum information-the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices2. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms3, or charge and spin fluctuations arising from defects in oxides and interfaces4. For materials such as silicon, enrichment of the spin-zero 28Si isotope drastically reduces spin-bath decoherence5. Experiments on bulk spin ensembles in 28Si crystals have indeed demonstrated extraordinary coherence times6-8. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual 31P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28Si substrate. The 31P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy9 indicates that-contrary to widespread belief-it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

AB - The spin of an electron or a nucleus in a semiconductor1 naturally implements the unit of quantum information-the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices2. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms3, or charge and spin fluctuations arising from defects in oxides and interfaces4. For materials such as silicon, enrichment of the spin-zero 28Si isotope drastically reduces spin-bath decoherence5. Experiments on bulk spin ensembles in 28Si crystals have indeed demonstrated extraordinary coherence times6-8. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual 31P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28Si substrate. The 31P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy9 indicates that-contrary to widespread belief-it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

UR - http://www.scopus.com/inward/record.url?scp=84918583462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84918583462&partnerID=8YFLogxK

U2 - 10.1038/nnano.2014.211

DO - 10.1038/nnano.2014.211

M3 - Article

VL - 9

SP - 986

EP - 991

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 12

ER -