Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. J. Fons; Shigeru Niki; Akimasa Yamada; Yasumasa Okada; D. J. Tweet

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

P. J. Fons, Shigeru Niki, Akimasa Yamada, Yasumasa Okada, D. J. Tweet

Research output: Contribution to journal › Article › peer-review

Abstract

A series of CuInSe₂ thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe₂ thin film in-plane lattice constant for CuInSe₂ films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched Tn_0.29Ga_0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe₂ layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Original language	English
Pages (from-to)	X5-163
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	60
Issue number	3
Publication status	Published - 1996 Dec 1
Externally published	Yes

Keywords

Chalcopyrite
CuInSe
Diffusion
Strain

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{86668f3fff984b6e915771382503ac58,

title = "Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates",

abstract = "A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched Tn0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.",

keywords = "Chalcopyrite, CuInSe, Diffusion, Strain",

author = "Fons, {P. J.} and Shigeru Niki and Akimasa Yamada and Yasumasa Okada and Tweet, {D. J.}",

year = "1996",

month = dec,

day = "1",

language = "English",

volume = "60",

pages = "X5--163",

journal = "Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory",

issn = "0366-9092",

publisher = "Denshi Gijutsu Sogo Kenkyujo",

number = "3",

}

TY - JOUR

T1 - Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

AU - Fons, P. J.

AU - Niki, Shigeru

AU - Yamada, Akimasa

AU - Okada, Yasumasa

AU - Tweet, D. J.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched Tn0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

AB - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched Tn0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

KW - Chalcopyrite

KW - CuInSe

KW - Diffusion

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=4243065467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243065467&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4243065467

SN - 0366-9092

VL - 60

SP - X5-163

JO - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

JF - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

IS - 3

ER -

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this