Strain sensing using electrically conductive structures composed of β-SiC fabricated by femtosecond laser direct modification of PDMS

Shuichiro Hayashi, Yasutaka Nakajima, Mitsuhiro Terakawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By femtosecond-laser-based modification of polydimethylsiloxane (PDMS), we fabricated an electrically conductive structure composed of β-silicon carbide (β-SiC) on a PDMS thin film for strain sensing. With an increase in applied strain, i.e. smaller bend radii of the conductive structures, the conductivity of the structure decreased significantly. The result indicates that the resistance of the conductive structure has high sensitivity to strain, leading to potential applications such as real-time monitoring of human motion.

Original languageEnglish
Title of host publicationLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
EditorsGediminas Raciukaitis, Carlos Molpeceres, Tetsuya Makimura
PublisherSPIE
ISBN (Electronic)9781510624528
DOIs
Publication statusPublished - 2019 Jan 1
EventLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019 - San Francisco, United States
Duration: 2019 Feb 42019 Feb 6

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10905
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019
CountryUnited States
CitySan Francisco
Period19/2/419/2/6

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Keywords

  • femtosecond laser
  • laser direct modification
  • polydimethylsiloxane
  • silicon carbide
  • strain sensing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Hayashi, S., Nakajima, Y., & Terakawa, M. (2019). Strain sensing using electrically conductive structures composed of β-SiC fabricated by femtosecond laser direct modification of PDMS. In G. Raciukaitis, C. Molpeceres, & T. Makimura (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV [1090519] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10905). SPIE. https://doi.org/10.1117/12.2507088