In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs man SiO2 nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2007 Dec 1|
|Event||2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan|
Duration: 2007 Jun 12 → 2007 Jun 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering