Stress engineering for high-k FETs: Mobility and Ion enhancements by optimized stress

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)


    In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs man SiO2 nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.

    Original languageEnglish
    Article number4339756
    Pages (from-to)132-133
    Number of pages2
    JournalDigest of Technical Papers - Symposium on VLSI Technology
    Publication statusPublished - 2007
    Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
    Duration: 2007 Jun 122007 Jun 14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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