Stress engineering for high-k FETs: Mobility and Ion enhancements by optimized stress

Masumi Saitoh; Shigeki Kobayashi; Ken Uchida

doi:10.1109/VLSIT.2007.4339756

Stress engineering for high-k FETs: Mobility and I_on enhancements by optimized stress

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and I_on enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO₂ nFETs in high E_eff, resulting in the better I_on improvement of high-k nFETs man SiO₂ nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO₂ pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.

Original language	English
Article number	4339756
Pages (from-to)	132-133
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339756
Publication status	Published - 2007
Externally published	Yes
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: 2007 Jun 12 → 2007 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/VLSIT.2007.4339756

Cite this

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title = "Stress engineering for high-k FETs: Mobility and Ion enhancements by optimized stress",

abstract = "In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs man SiO2 nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.",

author = "Masumi Saitoh and Shigeki Kobayashi and Ken Uchida",

year = "2007",

doi = "10.1109/VLSIT.2007.4339756",

language = "English",

pages = "132--133",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

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TY - JOUR

T1 - Stress engineering for high-k FETs

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

AU - Saitoh, Masumi

AU - Kobayashi, Shigeki

AU - Uchida, Ken

PY - 2007

Y1 - 2007

N2 - In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs man SiO2 nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.

AB - In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (μ) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that μ enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs man SiO2 nFETs particularly in shorter-channel regime. It is also shown that μ enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-μ high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.

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EP - 133

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339756

Y2 - 12 June 2007 through 14 June 2007

ER -

Stress engineering for high-k FETs: Mobility and I_on enhancements by optimized stress

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