Stress engineering in (100) and (110) nMOSFETs

Ken Uchida, Masumi Saitoh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The physical mechanisms of electron mobility (μ e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (ΔE C) and effective mass change (Δm*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (100) nMOSFETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔE C and Δm*, experimental μ e enhancement is accurately modeled for biaxial, uniaxial >100<, and uniaxial <110> stress for (100) and (110) nMOSFETs. The limits of μ e enhancement are also discussed.

    Original languageEnglish
    Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
    Pages109-112
    Number of pages4
    DOIs
    Publication statusPublished - 2008 Dec 1
    Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
    Duration: 2008 Oct 202008 Oct 23

    Publication series

    NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

    Other

    Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
    CountryChina
    CityBeijing
    Period08/10/2008/10/23

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Uchida, K., & Saitoh, M. (2008). Stress engineering in (100) and (110) nMOSFETs. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 109-112). [4734485] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734485