Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

Original languageEnglish
Pages (from-to)1451-1457
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number7
DOIs
Publication statusPublished - 2009 Jun 8

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Keywords

  • Biaxial stress
  • HfSiON
  • High-κ
  • Mobility
  • Remote Coulomb scattering (RCS)
  • Short channel
  • Strain
  • Stress
  • Uniaxial stress
  • Velocity
  • Velocity saturation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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