Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

    Original languageEnglish
    Pages (from-to)1451-1457
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume56
    Issue number7
    DOIs
    Publication statusPublished - 2009 Jun 8

    Keywords

    • Biaxial stress
    • HfSiON
    • High-κ
    • Mobility
    • Remote Coulomb scattering (RCS)
    • Short channel
    • Strain
    • Stress
    • Uniaxial stress
    • Velocity
    • Velocity saturation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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