Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

Original languageEnglish
Pages (from-to)1451-1457
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number7
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

Field effect transistors
Tensile strain
Scattering
Tensile stress
Surface roughness

Keywords

  • Biaxial stress
  • HfSiON
  • High-κ
  • Mobility
  • Remote Coulomb scattering (RCS)
  • Short channel
  • Strain
  • Stress
  • Uniaxial stress
  • Velocity
  • Velocity saturation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Stress engineering in high-κ FETs for mobility and on-current enhancements. / Saitoh, Masumi; Kobayashi, Shigeki; Uchida, Ken.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 7, 2009, p. 1451-1457.

Research output: Contribution to journalArticle

Saitoh, Masumi ; Kobayashi, Shigeki ; Uchida, Ken. / Stress engineering in high-κ FETs for mobility and on-current enhancements. In: IEEE Transactions on Electron Devices. 2009 ; Vol. 56, No. 7. pp. 1451-1457.
@article{094918b5f8e643aeb033c68e2f16b732,
title = "Stress engineering in high-κ FETs for mobility and on-current enhancements",
abstract = "We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.",
keywords = "Biaxial stress, HfSiON, High-κ, Mobility, Remote Coulomb scattering (RCS), Short channel, Strain, Stress, Uniaxial stress, Velocity, Velocity saturation",
author = "Masumi Saitoh and Shigeki Kobayashi and Ken Uchida",
year = "2009",
doi = "10.1109/TED.2009.2021345",
language = "English",
volume = "56",
pages = "1451--1457",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Stress engineering in high-κ FETs for mobility and on-current enhancements

AU - Saitoh, Masumi

AU - Kobayashi, Shigeki

AU - Uchida, Ken

PY - 2009

Y1 - 2009

N2 - We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

AB - We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

KW - Biaxial stress

KW - HfSiON

KW - High-κ

KW - Mobility

KW - Remote Coulomb scattering (RCS)

KW - Short channel

KW - Strain

KW - Stress

KW - Uniaxial stress

KW - Velocity

KW - Velocity saturation

UR - http://www.scopus.com/inward/record.url?scp=67650269417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650269417&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2021345

DO - 10.1109/TED.2009.2021345

M3 - Article

VL - 56

SP - 1451

EP - 1457

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -