Stress limited scaling in Ge2Sb2Te5

Robert E. Simpson, Milos Krbal, Paul J. Fons, Alexander V. Kolobov, Tomoya Uruga, Hajime Tanida, Junji Tominaga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The influence of stress on the phase change behaviour of Ge 2Sb2Te5 encapsulated by ZnSSiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te 5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
Pages13-18
Number of pages6
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2010 Apr 52010 Apr 9

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1251
ISSN (Print)0272-9172

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period10/4/510/4/9

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Simpson, R. E., Krbal, M., Fons, P. J., Kolobov, A. V., Uruga, T., Tanida, H., & Tominaga, J. (2010). Stress limited scaling in Ge2Sb2Te5. In Phase-Change Materials for Memory and Reconfigurable Electronics Applications (pp. 13-18). (Materials Research Society Symposium Proceedings; Vol. 1251).