TY - JOUR
T1 - Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity
AU - Kuruma, Kazuhiro
AU - Ota, Yasutomo
AU - Kakuda, Masahiro
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - We demonstrate strong coupling between a single quantum dot (QD) and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (∼8 106), a small mode volume [∼0.32 (λ/n)3], and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a QD. We fabricated L4/3 cavities and observed a high Q factor over 80 000 using photoluminescence measurement. We confirmed strong coupling between a single QD and an L4/3 cavity with a Q factor of 33 000 by observing a clear anti-crossing in the spectra.
AB - We demonstrate strong coupling between a single quantum dot (QD) and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (∼8 106), a small mode volume [∼0.32 (λ/n)3], and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a QD. We fabricated L4/3 cavities and observed a high Q factor over 80 000 using photoluminescence measurement. We confirmed strong coupling between a single QD and an L4/3 cavity with a Q factor of 33 000 by observing a clear anti-crossing in the spectra.
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U2 - 10.35848/1882-0786/aba7a8
DO - 10.35848/1882-0786/aba7a8
M3 - Article
AN - SCOPUS:85089855287
SN - 1882-0778
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 082009
ER -