Structural analysis of sol-gel-derived LaNiO 3(100)/CeO 2(100)/Si(100) heterostructures

Shinobu Fujihara, Shinichi Miyake, Toshio Kimura, Katsuhiko Inaba

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

LaNiO 3(100)/CeO 2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO 2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO 2 layers had a nonepitaxial structure in Spite of the deposition on the Si (100) substrates with good lattice compatibility. The LaNiO 3 layers on the CeO 2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO 3 layers was higher than that in the CeO 2 layers. The occurrence of the orientation was discussed in view of the interracial energies at each interface.

Original languageEnglish
Pages (from-to)793-797
Number of pages5
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume109
Issue number1273
Publication statusPublished - 2001 Sep

Fingerprint

Coating techniques
Spin coating
Epitaxial growth
structural analysis
Structural analysis
Crystal orientation
Oxides
Sol-gel process
Sol-gels
Heterojunctions
Metals
Heat treatment
gels
Semiconductor materials
X ray diffraction
Substrates
Temperature
MIS (semiconductors)
epitaxy
compatibility

Keywords

  • CeO
  • Heterostructure
  • LaNiO
  • Orientation
  • Sol-gel method
  • X-ray diffraction

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Structural analysis of sol-gel-derived LaNiO 3(100)/CeO 2(100)/Si(100) heterostructures. / Fujihara, Shinobu; Miyake, Shinichi; Kimura, Toshio; Inaba, Katsuhiko.

In: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, Vol. 109, No. 1273, 09.2001, p. 793-797.

Research output: Contribution to journalArticle

@article{cbf30abcfa524fc5bc45ab14f6443144,
title = "Structural analysis of sol-gel-derived LaNiO 3(100)/CeO 2(100)/Si(100) heterostructures",
abstract = "LaNiO 3(100)/CeO 2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO 2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO 2 layers had a nonepitaxial structure in Spite of the deposition on the Si (100) substrates with good lattice compatibility. The LaNiO 3 layers on the CeO 2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO 3 layers was higher than that in the CeO 2 layers. The occurrence of the orientation was discussed in view of the interracial energies at each interface.",
keywords = "CeO, Heterostructure, LaNiO, Orientation, Sol-gel method, X-ray diffraction",
author = "Shinobu Fujihara and Shinichi Miyake and Toshio Kimura and Katsuhiko Inaba",
year = "2001",
month = "9",
language = "English",
volume = "109",
pages = "793--797",
journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
issn = "0914-5400",
publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
number = "1273",

}

TY - JOUR

T1 - Structural analysis of sol-gel-derived LaNiO 3(100)/CeO 2(100)/Si(100) heterostructures

AU - Fujihara, Shinobu

AU - Miyake, Shinichi

AU - Kimura, Toshio

AU - Inaba, Katsuhiko

PY - 2001/9

Y1 - 2001/9

N2 - LaNiO 3(100)/CeO 2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO 2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO 2 layers had a nonepitaxial structure in Spite of the deposition on the Si (100) substrates with good lattice compatibility. The LaNiO 3 layers on the CeO 2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO 3 layers was higher than that in the CeO 2 layers. The occurrence of the orientation was discussed in view of the interracial energies at each interface.

AB - LaNiO 3(100)/CeO 2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO 2 layers was obtained with higher heat treatment temperatures, 600-700°C. The in-plane measurements revealed that the CeO 2 layers had a nonepitaxial structure in Spite of the deposition on the Si (100) substrates with good lattice compatibility. The LaNiO 3 layers on the CeO 2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO 3 layers was higher than that in the CeO 2 layers. The occurrence of the orientation was discussed in view of the interracial energies at each interface.

KW - CeO

KW - Heterostructure

KW - LaNiO

KW - Orientation

KW - Sol-gel method

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0035438962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035438962&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035438962

VL - 109

SP - 793

EP - 797

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 0914-5400

IS - 1273

ER -