Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov

Research output: Contribution to journalArticle

Abstract

Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalSemiconductors
Volume54
Issue number2
DOIs
Publication statusPublished - 2020 Feb 1
Externally publishedYes

Keywords

  • Ge–Sb–Te chalcogenide system
  • structural and dielectric properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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  • Cite this

    Castro-Arata, R. A., Stozharov, V. M., Dolginsev, D. M., Kononov, A. A., Saito, Y., Fons, P., Tominaga, J., Anisimova, N. I., & Kolobov, A. V. (2020). Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering. Semiconductors, 54(2), 201-204. https://doi.org/10.1134/S106378262002013X