Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation

M. Vijayakumar, S. Selvasekarapandian, T. Gnanasekaran, Shinobu Fujihara, Shinnosuke Koji

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Lanthanum fluoride thin film has been deposited on glass substrates by PVD method at various deposition temperatures (Ts), viz, 300, 473, 573 and 673 K. The hexagonal phase LaF3 film has been detected by using glancing angle XRD analysis. The structural parameters such as lattice constants, grain size and micro-strain has been calculated from the XRD data. The F- ion conduction through the grain and grain boundary has been analyzed using impedance analysis. The modulus spectra reveals the non-Debye nature and the distribution of relaxation times of the film.

Original languageEnglish
Pages (from-to)1119-1125
Number of pages7
JournalJournal of Fluorine Chemistry
Volume125
Issue number7
DOIs
Publication statusPublished - 2004 Jul

Fingerprint

Vacuum evaporation
Vacuum
Electric Impedance
lanthanum fluorides
evaporation
impedance
Thin films
vacuum
Physical vapor deposition
Lanthanum
thin films
X-ray diffraction
Relaxation time
Lattice constants
Glass
Grain boundaries
grain boundaries
grain size
relaxation time
Ions

Keywords

  • Impedance spectroscopy
  • LaF
  • Modulus analysis
  • XRD analysis

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Organic Chemistry
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation. / Vijayakumar, M.; Selvasekarapandian, S.; Gnanasekaran, T.; Fujihara, Shinobu; Koji, Shinnosuke.

In: Journal of Fluorine Chemistry, Vol. 125, No. 7, 07.2004, p. 1119-1125.

Research output: Contribution to journalArticle

Vijayakumar, M. ; Selvasekarapandian, S. ; Gnanasekaran, T. ; Fujihara, Shinobu ; Koji, Shinnosuke. / Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation. In: Journal of Fluorine Chemistry. 2004 ; Vol. 125, No. 7. pp. 1119-1125.
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