Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio

P. Fons, S. Niki, A. Yamada, D. J. Tweet

Research output: Contribution to journalConference article

Abstract

Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.

Original languageEnglish
Pages (from-to)9-14
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume441
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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