Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio

P. Fons; S. Niki; A. Yamada; D. J. Tweet

Structural and surface morphology changes in CuInSe₂ thin films as a function of Cu/In ratio

P. Fons, S. Niki, A. Yamada, D. J. Tweet

Research output: Contribution to journal › Conference article › peer-review

Abstract

Due to its high near bandedge absorption, CuInSe₂ is considered to be one of the most promising solar cell materials. As CuInSe₂ films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe₂ epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	441
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio",

abstract = "Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·{\=1}·2} planes.",

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year = "1997",

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language = "English",

volume = "441",

pages = "9--14",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - JOUR

T1 - Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio

AU - Fons, P.

AU - Niki, S.

AU - Yamada, A.

AU - Tweet, D. J.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.

AB - Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.

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AN - SCOPUS:0030706868

SN - 0272-9172

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JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Structural and surface morphology changes in CuInSe₂ thin films as a function of Cu/In ratio

Abstract

ASJC Scopus subject areas

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