Structural change in sol-gel derived SiO2 films using ultraviolet irradiation

Hiroaki Imai, Hiroshi Hirashima, Koichi Awazu, Hideo Onuki

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


Photo-induced changes in structure of sol-gel derived SiO2 films were studied in order to explore a possibility of densification of sol-gel films at room temperature using energetic photons. Gel films which were produced on silicon substrates by dip-coating of sols prepared through hydrolysis of tetraethoxysilane were subjected to synchrotron radiation at room temperature. Structural changes of the gel films were investigated by ellipsometry and infrared spectroscopy. The radiation resulted in an increase in refractive index, a decrease in thickness of the films and a loss of OH groups. Increase in temperature of the films was less than 50 °C during the irradiation. The results indicate that ultraviolet lights induce densification of gel films through electronic excitation.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1994 Oct 13
EventSol-Gel Optics III 1994 - San Diego, United States
Duration: 1994 Jul 241994 Jul 29


  • Photo-induced structural change
  • SiO
  • Sol-gel
  • Synchrotron radiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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