Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure

K. Sakurai, R. Scheer, S. Nakamura, Y. Kimura, T. Baba, C. A. Kaufmann, A. Neisser, S. Ishizuka, A. Yamada, K. Matsubara, K. Iwata, P. Fons, H. Nakanishi, S. Niki

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We have studied the three-stage deposition process of CuIn1-xGaxSe2 (CIGS) thin films using spectroscopic light scattering (SLS), under varied deposition conditions. The structural changes of CIGS films by (1) Ga composition, (2) Se supply and (3) low deposition temperature, were observed in situ by SLS. The largest changes in SLS profiles by the Ga composition was observed between x = 0.3 and 0.5. The SLS profiles changed significantly during stage 1 by varying the Se pressure, while the temperature profiles did not.

Original languageEnglish
Pages (from-to)3377-3384
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume90
Issue number18-19
DOIs
Publication statusPublished - 2006 Nov 23
Externally publishedYes

Keywords

  • CIGS
  • Light scattering
  • SLS
  • Solar cell
  • Three stage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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