Structural characterization of MBE grown CuInSe2 epitaxial layers

Y. Okada; P. J. Fons; S. Niki; R. Shioda; A. Yamada; H. Oyanagi; Y. Makita

Structural characterization of MBE grown CuInSe₂ epitaxial layers

Y. Okada, P. J. Fons, S. Niki, R. Shioda, A. Yamada, H. Oyanagi, Y. Makita

Research output: Contribution to journal › Article › peer-review

Abstract

The structure of CuInSe₂ single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.

Original language	English
Pages (from-to)	X6-168
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	60
Issue number	3
Publication status	Published - 1996 Dec 1
Externally published	Yes

Keywords

CuInSe

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Structural characterization of MBE grown CuInSe2 epitaxial layers",

abstract = "The structure of CuInSe2 single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.",

keywords = "CuInSe",

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T1 - Structural characterization of MBE grown CuInSe2 epitaxial layers

AU - Okada, Y.

AU - Fons, P. J.

AU - Niki, S.

AU - Shioda, R.

AU - Yamada, A.

AU - Oyanagi, H.

AU - Makita, Y.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The structure of CuInSe2 single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.

AB - The structure of CuInSe2 single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.

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Structural characterization of MBE grown CuInSe₂ epitaxial layers

Abstract

Keywords

ASJC Scopus subject areas

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