Structural characterization of MBE grown CuInSe2 epitaxial layers

Y. Okada, P. J. Fons, R. Shioda, H. Oyanagi, S. Niki, A. Yamada, Y. Makita

Research output: Contribution to journalArticle

Abstract

The structure of CuInSe2 single crystal films grown by molecular beam epitaxy on (001) GaAs substrates with the Cu/In ratio (γ) ranging from 0.62 to 1.53 has been characterized by a precise X-ray diffraction technique. It was found that these layers are highly oriented single crystals, and that the best chalcopyrite phase exists in a narrow composition range near γ = 0.98. The ratio of c-spacing to a-spacing (c/a ratio) reverses at γ = 0.98, indicating a stress cross over. In In-rich CIS the c/a ratio was found to be about 2.028 and the cell volume was estimated to be 98.4% of the standard value.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume60
Issue number3
Publication statusPublished - 1996 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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