Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se 2

Shogo Ishizuka; Akimasa Yamada; Paul J. Fons; Hajime Shibata; Shigeru Niki

doi:10.1002/pip.2464

Structural tuning of wide-gap chalcopyrite CuGaSe₂ thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se ₂

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Simultaneous realization of high values of open circuit voltage (V _oc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe₂ (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (V_oc->-0.9-V, FF->-0.7, and η->-10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se₂, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices.

Original language	English
Pages (from-to)	821-829
Number of pages	9
Journal	Progress in Photovoltaics: Research and Applications
Volume	22
Issue number	7
DOIs	https://doi.org/10.1002/pip.2464
Publication status	Published - 2014 Jul
Externally published	Yes

Keywords

Na effects
Se flux
chalcogenide
chalcopyrite

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pip.2464

Cite this

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title = "Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se 2",

abstract = "Simultaneous realization of high values of open circuit voltage (V oc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe2 (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (Voc->-0.9-V, FF->-0.7, and η->-10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se2, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices.",

keywords = "Na effects, Se flux, chalcogenide, chalcopyrite",

author = "Shogo Ishizuka and Akimasa Yamada and Fons, {Paul J.} and Hajime Shibata and Shigeru Niki",

year = "2014",

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T2 - Differences from narrow-gap Cu(In,Ga)Se 2

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Fons, Paul J.

AU - Shibata, Hajime

AU - Niki, Shigeru

PY - 2014/7

Y1 - 2014/7

N2 - Simultaneous realization of high values of open circuit voltage (V oc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe2 (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (Voc->-0.9-V, FF->-0.7, and η->-10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se2, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices.

AB - Simultaneous realization of high values of open circuit voltage (V oc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe2 (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (Voc->-0.9-V, FF->-0.7, and η->-10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se2, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices.

KW - Na effects

KW - Se flux

KW - chalcogenide

KW - chalcopyrite

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