Abstract
We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si: P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron Orbitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.
Original language | English |
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Pages (from-to) | 2826-2835 |
Number of pages | 10 |
Journal | Journal of the Physical Society of Japan |
Volume | 58 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1989 Jan 1 |
Externally published | Yes |
Keywords
- Anderson localization
- Electron correlation
- MCSCF method
- Metal-insulator transition
- Mott transition
- Shallow impurity level
- Si:P
- Spin pair
ASJC Scopus subject areas
- Physics and Astronomy(all)