Studies of the correlation effect on the Anderson-localized states in Si

P by the MCSCF Method. I. Uncompensated case

Mikio Eto, Hiroshi Kamimura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si:P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron or-bitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.

Original languageEnglish
Pages (from-to)2826-2835
Number of pages10
JournalJournal of the Physical Society of Japan
Volume58
Issue number8
Publication statusPublished - 1989 Aug
Externally publishedYes

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self consistent fields
configurations
insulators
metals
electrons
screening
electronics

Keywords

  • Anderson localization
  • Electron correlation
  • MCSCF method
  • Metal-insulator transition
  • Mott transition
  • Shallow impurity level
  • Si:P
  • Spin pair

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Studies of the correlation effect on the Anderson-localized states in Si : P by the MCSCF Method. I. Uncompensated case. / Eto, Mikio; Kamimura, Hiroshi.

In: Journal of the Physical Society of Japan, Vol. 58, No. 8, 08.1989, p. 2826-2835.

Research output: Contribution to journalArticle

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