Studies of the correlation effect on the anderson-localized states in si: P by the mcscf method. i. uncompensated case

Mikio Eto, Hiroshi Kamimura

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si: P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron Orbitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.

Original languageEnglish
Pages (from-to)2826-2835
Number of pages10
JournalJournal of the Physical Society of Japan
Volume58
Issue number8
DOIs
Publication statusPublished - 1989 Jan 1
Externally publishedYes

Keywords

  • Anderson localization
  • Electron correlation
  • MCSCF method
  • Metal-insulator transition
  • Mott transition
  • Shallow impurity level
  • Si:P
  • Spin pair

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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