Abstract
We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si:P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron or-bitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.
| Original language | English |
|---|---|
| Pages (from-to) | 2826-2835 |
| Number of pages | 10 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 58 |
| Issue number | 8 |
| Publication status | Published - 1989 Aug |
| Externally published | Yes |
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Keywords
- Anderson localization
- Electron correlation
- MCSCF method
- Metal-insulator transition
- Mott transition
- Shallow impurity level
- Si:P
- Spin pair
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Studies of the correlation effect on the Anderson-localized states in Si : P by the MCSCF Method. I. Uncompensated case. / Eto, Mikio; Kamimura, Hiroshi.
In: Journal of the Physical Society of Japan, Vol. 58, No. 8, 08.1989, p. 2826-2835.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies of the correlation effect on the Anderson-localized states in Si
T2 - P by the MCSCF Method. I. Uncompensated case
AU - Eto, Mikio
AU - Kamimura, Hiroshi
PY - 1989/8
Y1 - 1989/8
N2 - We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si:P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron or-bitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.
AB - We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the present authors. By simulating the Si:P system by a cluster model, we clarify the features of the Anderson-localized states and the nature of the metal-insulator transition from a new standpoint. It is shown that most of electrons form spin-singlet pairs and remaining pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron or-bitals near the Fermi level are extended and the correlation becomes weak by screening. This suggests the Mott-type transition.
KW - Anderson localization
KW - Electron correlation
KW - MCSCF method
KW - Metal-insulator transition
KW - Mott transition
KW - Shallow impurity level
KW - Si:P
KW - Spin pair
UR - http://www.scopus.com/inward/record.url?scp=2242486971&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2242486971&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2242486971
VL - 58
SP - 2826
EP - 2835
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 8
ER -