Studies of the optoelectronic properties of ZnO thin films

R. Ghosh, Shinobu Fujihara, D. Basak

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

Original languageEnglish
Pages (from-to)1728-1733
Number of pages6
JournalJournal of Electronic Materials
Volume35
Issue number9
Publication statusPublished - 2006 Sep

Fingerprint

Optoelectronic devices
Thin films
Quartz
thin films
Photoluminescence
Substrates
quartz
Annealing
photoluminescence
Glass
annealing
Aluminum Oxide
glass
Dark currents
Photoconductivity
dark current
Sapphire
photoconductivity
wurtzite
Sol-gels

Keywords

  • Optoelectronic
  • Sol-gel
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Studies of the optoelectronic properties of ZnO thin films. / Ghosh, R.; Fujihara, Shinobu; Basak, D.

In: Journal of Electronic Materials, Vol. 35, No. 9, 09.2006, p. 1728-1733.

Research output: Contribution to journalArticle

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