Studies of the optoelectronic properties of ZnO thin films

R. Ghosh; S. Fujihara; D. Basak

doi:10.1007/s11664-006-0226-6

Studies of the optoelectronic properties of ZnO thin films

R. Ghosh, S. Fujihara, D. Basak

Department of Applied Chemistry

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

Original language	English
Pages (from-to)	1728-1733
Number of pages	6
Journal	Journal of Electronic Materials
Volume	35
Issue number	9
DOIs	https://doi.org/10.1007/s11664-006-0226-6
Publication status	Published - 2006 Sep

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Keywords

Optoelectronic
Sol-gel
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Ghosh, R., Fujihara, S., & Basak, D. (2006). Studies of the optoelectronic properties of ZnO thin films. Journal of Electronic Materials, 35(9), 1728-1733. https://doi.org/10.1007/s11664-006-0226-6

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10.1007/s11664-006-0226-6