Studies of the optoelectronic properties of ZnO thin films

R. Ghosh; S. Fujihara; D. Basak

doi:10.1007/s11664-006-0226-6

Studies of the optoelectronic properties of ZnO thin films

R. Ghosh, S. Fujihara, D. Basak

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

Original language	English
Pages (from-to)	1728-1733
Number of pages	6
Journal	Journal of Electronic Materials
Volume	35
Issue number	9
DOIs	https://doi.org/10.1007/s11664-006-0226-6
Publication status	Published - 2006 Sep

Keywords

Optoelectronic
Sol-gel
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-006-0226-6

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@article{c1d51b4586a14d559d64ba6b93674b0f,

title = "Studies of the optoelectronic properties of ZnO thin films",

abstract = "ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.",

keywords = "Optoelectronic, Sol-gel, ZnO",

author = "R. Ghosh and S. Fujihara and D. Basak",

note = "Funding Information: This work is financially supported by the Department of Science and Technology (DST), India Vide Project No. SR/FTP/PSA-07/2002.",

year = "2006",

month = sep,

doi = "10.1007/s11664-006-0226-6",

language = "English",

volume = "35",

pages = "1728--1733",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

}

TY - JOUR

T1 - Studies of the optoelectronic properties of ZnO thin films

AU - Ghosh, R.

AU - Fujihara, S.

AU - Basak, D.

N1 - Funding Information: This work is financially supported by the Department of Science and Technology (DST), India Vide Project No. SR/FTP/PSA-07/2002.

PY - 2006/9

Y1 - 2006/9

N2 - ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

AB - ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

KW - Optoelectronic

KW - Sol-gel

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=33749320898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749320898&partnerID=8YFLogxK

U2 - 10.1007/s11664-006-0226-6

DO - 10.1007/s11664-006-0226-6

M3 - Article

AN - SCOPUS:33749320898

VL - 35

SP - 1728

EP - 1733

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 9

ER -

Studies of the optoelectronic properties of ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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