Studies of the optoelectronic properties of ZnO thin films

R. Ghosh, S. Fujihara, D. Basak

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.

Original languageEnglish
Pages (from-to)1728-1733
Number of pages6
JournalJournal of Electronic Materials
Volume35
Issue number9
DOIs
Publication statusPublished - 2006 Sep

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Keywords

  • Optoelectronic
  • Sol-gel
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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