Abstract
ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.
| Original language | English |
|---|---|
| Pages (from-to) | 1728-1733 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 35 |
| Issue number | 9 |
| Publication status | Published - 2006 Sep |
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Keywords
- Optoelectronic
- Sol-gel
- ZnO
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Studies of the optoelectronic properties of ZnO thin films. / Ghosh, R.; Fujihara, Shinobu; Basak, D.
In: Journal of Electronic Materials, Vol. 35, No. 9, 09.2006, p. 1728-1733.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies of the optoelectronic properties of ZnO thin films
AU - Ghosh, R.
AU - Fujihara, Shinobu
AU - Basak, D.
PY - 2006/9
Y1 - 2006/9
N2 - ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.
AB - ZnO thin films have been deposited on quartz glass, sapphire, and glass substrates by the sol-gel technique and subjected to different annealing ambients. X-ray diffraction measurements show that all the films are hexagonal wurtzite type. The variations in photoluminescence (PL) and photoconductivity (PC) properties have been correlated to the structural and microstructural changes due to different substrates and annealing ambients. The maximum photoresponse has been observed for the films on quartz substrates. The violet emission in the PL spectra is enhanced for vacuum and nitrogen annealed films. The maximum ultraviolet (UV) photoresponse and photo-to-dark current ratio is observed for ZnO films annealed in air.
KW - Optoelectronic
KW - Sol-gel
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=33749320898&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749320898&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33749320898
VL - 35
SP - 1728
EP - 1733
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 9
ER -