Study of energy band parameters in p‐type Ge0.9Si0.1 alloys

K. Takeda, Y. Maeda, E. Ohta, M. Sakata, G. Kido, N. Miura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

Original languageEnglish
Pages (from-to)369-379
Number of pages11
Journalphysica status solidi (b)
Volume115
Issue number2
DOIs
Publication statusPublished - 1983 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Study of energy band parameters in p‐type Ge<sub>0.9</sub>Si<sub>0.1</sub> alloys'. Together they form a unique fingerprint.

  • Cite this

    Takeda, K., Maeda, Y., Ohta, E., Sakata, M., Kido, G., & Miura, N. (1983). Study of energy band parameters in p‐type Ge0.9Si0.1 alloys. physica status solidi (b), 115(2), 369-379. https://doi.org/10.1002/pssb.2221150206