Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge

Eriko Shigesawa, Ryotaro Matsuoka, Masashi Fukumoto, Ryosuke Sano, Kohei M Itoh, Hiroshi Nohira, Kentarou Sawano

Research output: Contribution to journalArticle

Abstract

Germanium (Ge) has been attracting considerable attention as a high mobility channel material to enhance the performance of CMOS circuits. One of the most important issues for realization of practical Ge-MOSFET devices with superior performances is requirement to improve qualities of gate dielectric/Ge interfaces. In this work, Al2O3/Ge structures are fabricated by direct atomic layer deposition (ALD) on epitaxialy grown Ge. We indicate that ALD incubation time is fully suppressed by the ALD on a completely clean Ge surface created by Ge epitaxy on a Ge substrate. Moreover, x-ray photoelectron spectroscopy analyses reveal that unintentional formation of a GeO2 at the Al2O3/Ge interface can be almost avoided by the ALD on the epitaxial Ge whereas the interfacial GeO2 layer is present for samples exposed to the air before ALD. These results clearly indicate that direct ALD on epitaxial Ge is a very promising method to significantly improve Ge MOSFET performances.

Original languageEnglish
Article number124020
JournalSemiconductor Science and Technology
Volume33
Issue number12
DOIs
Publication statusPublished - 2018 Nov 20

Fingerprint

Germanium
Atomic layer deposition
atomic layer epitaxy
germanium
field effect transistors
Gate dielectrics
MOSFET devices
Photoelectron spectroscopy
Epitaxial growth
epitaxy
x ray spectroscopy
CMOS

Keywords

  • AlO
  • ALD
  • Germanium
  • MBE
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Shigesawa, E., Matsuoka, R., Fukumoto, M., Sano, R., Itoh, K. M., Nohira, H., & Sawano, K. (2018). Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge. Semiconductor Science and Technology, 33(12), [124020]. https://doi.org/10.1088/1361-6641/aaec51

Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge. / Shigesawa, Eriko; Matsuoka, Ryotaro; Fukumoto, Masashi; Sano, Ryosuke; Itoh, Kohei M; Nohira, Hiroshi; Sawano, Kentarou.

In: Semiconductor Science and Technology, Vol. 33, No. 12, 124020, 20.11.2018.

Research output: Contribution to journalArticle

Shigesawa, E, Matsuoka, R, Fukumoto, M, Sano, R, Itoh, KM, Nohira, H & Sawano, K 2018, 'Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge', Semiconductor Science and Technology, vol. 33, no. 12, 124020. https://doi.org/10.1088/1361-6641/aaec51
Shigesawa, Eriko ; Matsuoka, Ryotaro ; Fukumoto, Masashi ; Sano, Ryosuke ; Itoh, Kohei M ; Nohira, Hiroshi ; Sawano, Kentarou. / Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 12.
@article{e75e936c129f4923ae4561814bb853d5,
title = "Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge",
abstract = "Germanium (Ge) has been attracting considerable attention as a high mobility channel material to enhance the performance of CMOS circuits. One of the most important issues for realization of practical Ge-MOSFET devices with superior performances is requirement to improve qualities of gate dielectric/Ge interfaces. In this work, Al2O3/Ge structures are fabricated by direct atomic layer deposition (ALD) on epitaxialy grown Ge. We indicate that ALD incubation time is fully suppressed by the ALD on a completely clean Ge surface created by Ge epitaxy on a Ge substrate. Moreover, x-ray photoelectron spectroscopy analyses reveal that unintentional formation of a GeO2 at the Al2O3/Ge interface can be almost avoided by the ALD on the epitaxial Ge whereas the interfacial GeO2 layer is present for samples exposed to the air before ALD. These results clearly indicate that direct ALD on epitaxial Ge is a very promising method to significantly improve Ge MOSFET performances.",
keywords = "AlO, ALD, Germanium, MBE, XPS",
author = "Eriko Shigesawa and Ryotaro Matsuoka and Masashi Fukumoto and Ryosuke Sano and Itoh, {Kohei M} and Hiroshi Nohira and Kentarou Sawano",
year = "2018",
month = "11",
day = "20",
doi = "10.1088/1361-6641/aaec51",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "12",

}

TY - JOUR

T1 - Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge

AU - Shigesawa, Eriko

AU - Matsuoka, Ryotaro

AU - Fukumoto, Masashi

AU - Sano, Ryosuke

AU - Itoh, Kohei M

AU - Nohira, Hiroshi

AU - Sawano, Kentarou

PY - 2018/11/20

Y1 - 2018/11/20

N2 - Germanium (Ge) has been attracting considerable attention as a high mobility channel material to enhance the performance of CMOS circuits. One of the most important issues for realization of practical Ge-MOSFET devices with superior performances is requirement to improve qualities of gate dielectric/Ge interfaces. In this work, Al2O3/Ge structures are fabricated by direct atomic layer deposition (ALD) on epitaxialy grown Ge. We indicate that ALD incubation time is fully suppressed by the ALD on a completely clean Ge surface created by Ge epitaxy on a Ge substrate. Moreover, x-ray photoelectron spectroscopy analyses reveal that unintentional formation of a GeO2 at the Al2O3/Ge interface can be almost avoided by the ALD on the epitaxial Ge whereas the interfacial GeO2 layer is present for samples exposed to the air before ALD. These results clearly indicate that direct ALD on epitaxial Ge is a very promising method to significantly improve Ge MOSFET performances.

AB - Germanium (Ge) has been attracting considerable attention as a high mobility channel material to enhance the performance of CMOS circuits. One of the most important issues for realization of practical Ge-MOSFET devices with superior performances is requirement to improve qualities of gate dielectric/Ge interfaces. In this work, Al2O3/Ge structures are fabricated by direct atomic layer deposition (ALD) on epitaxialy grown Ge. We indicate that ALD incubation time is fully suppressed by the ALD on a completely clean Ge surface created by Ge epitaxy on a Ge substrate. Moreover, x-ray photoelectron spectroscopy analyses reveal that unintentional formation of a GeO2 at the Al2O3/Ge interface can be almost avoided by the ALD on the epitaxial Ge whereas the interfacial GeO2 layer is present for samples exposed to the air before ALD. These results clearly indicate that direct ALD on epitaxial Ge is a very promising method to significantly improve Ge MOSFET performances.

KW - AlO

KW - ALD

KW - Germanium

KW - MBE

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=85057537825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057537825&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aaec51

DO - 10.1088/1361-6641/aaec51

M3 - Article

AN - SCOPUS:85057537825

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

M1 - 124020

ER -