Study on device parameters of carbon nanotube field electron transistors to realize steep subthreshold slope of less than 60 mV/Decade

Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The gate-induced band-to-band tunneling in carbon nanotube field effect transistors (CNFETs) is studied by solving the Poissson and carrier transport equations self-consistently. The transmission coefficient through the bandgap has been calculated using the Wentzel-Kramers-Brillouin (WKB) approximation. The device parameters of CNFETs with uniformly doped source/drain (S/D) regions have been investigated to find the parameter window to observe subthreshold slope (SS) of less than 60 mV/dec. It is demonstrated that the band-to-band tunneling (BTBT) current can be significantly enhanced by reducing the thickness of inter-layer oxide (tint) between the substrate and carbon nanotube (CNT). With a thin tint of 10nm (SiO2) and optimized S/D doping concentrations, a steep SS of less than 60 mV/dec can be achieved.

Original languageEnglish
Article number04DN01
JournalJapanese Journal of Applied Physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr
Externally publishedYes

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Carbon nanotube field effect transistors
Carbon nanotubes
Transistors
transistors
carbon nanotubes
slopes
Oxides
Carrier transport
Electrons
Energy gap
electrons
field effect transistors
Doping (additives)
oxides
Substrates
nanotubes
coefficients
approximation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Study on device parameters of carbon nanotube field electron transistors to realize steep subthreshold slope of less than 60 mV/Decade. / Algul, Berrin Pinar; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DN01, 04.2011.

Research output: Contribution to journalArticle

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