Study on device parameters of carbon nanotube field electron transistors to realize steep subthreshold slope of less than 60 mV/Decade

Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, Ken Uchida

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The gate-induced band-to-band tunneling in carbon nanotube field effect transistors (CNFETs) is studied by solving the Poissson and carrier transport equations self-consistently. The transmission coefficient through the bandgap has been calculated using the Wentzel-Kramers-Brillouin (WKB) approximation. The device parameters of CNFETs with uniformly doped source/drain (S/D) regions have been investigated to find the parameter window to observe subthreshold slope (SS) of less than 60 mV/dec. It is demonstrated that the band-to-band tunneling (BTBT) current can be significantly enhanced by reducing the thickness of inter-layer oxide (tint) between the substrate and carbon nanotube (CNT). With a thin tint of 10nm (SiO2) and optimized S/D doping concentrations, a steep SS of less than 60 mV/dec can be achieved.

    Original languageEnglish
    Article number04DN01
    JournalJapanese journal of applied physics
    Volume50
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2011 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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