Study on planarization of silicon-wafer by CMP

Yoshiaki Sasaki, Hideki Aoyama, Ichiro Inasaki, Hiroshi Shibaya

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In order to make a highly integrated LSI, the circuits of patterned metal layers are constructed on a semiconductor-wafer as three-dimensional structure. In the processes of constructing three-dimensional circuits, the dielectric films that should be planarity before depositing patterned metal layers on it are made between the circuit layers. CMP (Chemical Mechanical Polish) is the most effective technology for planarizing semiconductor-wafer surfaces. For improving the functions and performance of a CMP machine, the various items such as polishing pressure, polishing pad, retainer ring, backing film and ingredients of slurry have to be taken into consideration. More efficient processing conditions for CMP and machine parameters to be designed are decided by know how and knowledge obtained by repeating basic experiments. However, since it takes much time and manpower to get them via experiments, it is required to determine by computer analyses. Since pressure applied on a semiconductor-wafer surface is the most essential factor about the rate of mechanical polish, it is indispensable to obtain pressure distribution on the wafer-surface in order to estimate the rate. In this paper, pressure distribution given to the wafer-surface is computed by FEM (Finite Element Method) to estimate the polishing rate in order to determine optimum machine parameters to be design.

Original languageEnglish
Pages (from-to)3108-3114
Number of pages7
JournalNippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C
Volume68
Issue number10
Publication statusPublished - 2002 Oct

Fingerprint

Silicon wafers
Polishing
Semiconductor materials
Pressure distribution
Networks (circuits)
Dielectric films
Metals
Experiments
Finite element method
Processing

Keywords

  • CMP (Chemical Mechanical Polishing)
  • FEM
  • Polishing Rate
  • Pressure Distribution

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Study on planarization of silicon-wafer by CMP. / Sasaki, Yoshiaki; Aoyama, Hideki; Inasaki, Ichiro; Shibaya, Hiroshi.

In: Nippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C, Vol. 68, No. 10, 10.2002, p. 3108-3114.

Research output: Contribution to journalArticle

@article{be79c93a530a44d6ae2feaed232e5b83,
title = "Study on planarization of silicon-wafer by CMP",
abstract = "In order to make a highly integrated LSI, the circuits of patterned metal layers are constructed on a semiconductor-wafer as three-dimensional structure. In the processes of constructing three-dimensional circuits, the dielectric films that should be planarity before depositing patterned metal layers on it are made between the circuit layers. CMP (Chemical Mechanical Polish) is the most effective technology for planarizing semiconductor-wafer surfaces. For improving the functions and performance of a CMP machine, the various items such as polishing pressure, polishing pad, retainer ring, backing film and ingredients of slurry have to be taken into consideration. More efficient processing conditions for CMP and machine parameters to be designed are decided by know how and knowledge obtained by repeating basic experiments. However, since it takes much time and manpower to get them via experiments, it is required to determine by computer analyses. Since pressure applied on a semiconductor-wafer surface is the most essential factor about the rate of mechanical polish, it is indispensable to obtain pressure distribution on the wafer-surface in order to estimate the rate. In this paper, pressure distribution given to the wafer-surface is computed by FEM (Finite Element Method) to estimate the polishing rate in order to determine optimum machine parameters to be design.",
keywords = "CMP (Chemical Mechanical Polishing), FEM, Polishing Rate, Pressure Distribution",
author = "Yoshiaki Sasaki and Hideki Aoyama and Ichiro Inasaki and Hiroshi Shibaya",
year = "2002",
month = "10",
language = "English",
volume = "68",
pages = "3108--3114",
journal = "Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C",
issn = "0387-5024",
publisher = "Japan Society of Mechanical Engineers",
number = "10",

}

TY - JOUR

T1 - Study on planarization of silicon-wafer by CMP

AU - Sasaki, Yoshiaki

AU - Aoyama, Hideki

AU - Inasaki, Ichiro

AU - Shibaya, Hiroshi

PY - 2002/10

Y1 - 2002/10

N2 - In order to make a highly integrated LSI, the circuits of patterned metal layers are constructed on a semiconductor-wafer as three-dimensional structure. In the processes of constructing three-dimensional circuits, the dielectric films that should be planarity before depositing patterned metal layers on it are made between the circuit layers. CMP (Chemical Mechanical Polish) is the most effective technology for planarizing semiconductor-wafer surfaces. For improving the functions and performance of a CMP machine, the various items such as polishing pressure, polishing pad, retainer ring, backing film and ingredients of slurry have to be taken into consideration. More efficient processing conditions for CMP and machine parameters to be designed are decided by know how and knowledge obtained by repeating basic experiments. However, since it takes much time and manpower to get them via experiments, it is required to determine by computer analyses. Since pressure applied on a semiconductor-wafer surface is the most essential factor about the rate of mechanical polish, it is indispensable to obtain pressure distribution on the wafer-surface in order to estimate the rate. In this paper, pressure distribution given to the wafer-surface is computed by FEM (Finite Element Method) to estimate the polishing rate in order to determine optimum machine parameters to be design.

AB - In order to make a highly integrated LSI, the circuits of patterned metal layers are constructed on a semiconductor-wafer as three-dimensional structure. In the processes of constructing three-dimensional circuits, the dielectric films that should be planarity before depositing patterned metal layers on it are made between the circuit layers. CMP (Chemical Mechanical Polish) is the most effective technology for planarizing semiconductor-wafer surfaces. For improving the functions and performance of a CMP machine, the various items such as polishing pressure, polishing pad, retainer ring, backing film and ingredients of slurry have to be taken into consideration. More efficient processing conditions for CMP and machine parameters to be designed are decided by know how and knowledge obtained by repeating basic experiments. However, since it takes much time and manpower to get them via experiments, it is required to determine by computer analyses. Since pressure applied on a semiconductor-wafer surface is the most essential factor about the rate of mechanical polish, it is indispensable to obtain pressure distribution on the wafer-surface in order to estimate the rate. In this paper, pressure distribution given to the wafer-surface is computed by FEM (Finite Element Method) to estimate the polishing rate in order to determine optimum machine parameters to be design.

KW - CMP (Chemical Mechanical Polishing)

KW - FEM

KW - Polishing Rate

KW - Pressure Distribution

UR - http://www.scopus.com/inward/record.url?scp=0036818453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036818453&partnerID=8YFLogxK

M3 - Article

VL - 68

SP - 3108

EP - 3114

JO - Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C

JF - Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C

SN - 0387-5024

IS - 10

ER -