Sub-band structure engineering for advanced CMOS channels

Shin Ichi Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, K. Uchida

    Research output: Contribution to journalArticlepeer-review

    68 Citations (Scopus)

    Abstract

    This paper reviews our recent studies of novel CMOS channels based on the concept of sub-band structure engineering. This device design concept can be realized as strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-Insulator (GOI) MOSFETs. An important factor for the electron mobility enhancement is the introduction of larger sub-band energy splitting between the 2- and 4-fold valleys on a (1 0 0) surface, which can be obtained in strained-Si and ultra-thin body channels. The electrical properties of strained-Si MOSFETs are summarized with an emphasis on strained-SOI structures. Also, the importance of the precise control of ultra-thin SOI thickness is pointed out from the experimental results of the SOI thickness dependence of mobility. Furthermore, it is shown that the increase in the sub-band energy splitting can also be effective in obtaining higher current drive of n-channel MOSFETs under ballistic transport regime. This suggests that the current drive enhancement based on MOS channel engineering utilizing strain and ultra-thin body structures can be extended to ultra-short channel MOSFETs dominated by ballistic transport.

    Original languageEnglish
    Pages (from-to)684-694
    Number of pages11
    JournalSolid-State Electronics
    Volume49
    Issue number5
    DOIs
    Publication statusPublished - 2005 May 1

    Keywords

    • Ballistic transport
    • Mobility
    • SOI
    • Strained Si
    • Sub-band

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Sub-band structure engineering for advanced CMOS channels'. Together they form a unique fingerprint.

    Cite this