Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

Tomonori Arakawa, Koji Sekiguchi, Shuji Nakamura, Kensaku Chida, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Akio Fukushima, Shinji Yuasa, Teruo Ono

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

Original languageEnglish
Article number202103
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 2011 May 16
Externally publishedYes

Fingerprint

shot noise
configurations
electron tunneling
unity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Arakawa, T., Sekiguchi, K., Nakamura, S., Chida, K., Nishihara, Y., Chiba, D., ... Ono, T. (2011). Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. Applied Physics Letters, 98(20), [202103]. https://doi.org/10.1063/1.3590921

Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. / Arakawa, Tomonori; Sekiguchi, Koji; Nakamura, Shuji; Chida, Kensaku; Nishihara, Yoshitaka; Chiba, Daichi; Kobayashi, Kensuke; Fukushima, Akio; Yuasa, Shinji; Ono, Teruo.

In: Applied Physics Letters, Vol. 98, No. 20, 202103, 16.05.2011.

Research output: Contribution to journalArticle

Arakawa, T, Sekiguchi, K, Nakamura, S, Chida, K, Nishihara, Y, Chiba, D, Kobayashi, K, Fukushima, A, Yuasa, S & Ono, T 2011, 'Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions', Applied Physics Letters, vol. 98, no. 20, 202103. https://doi.org/10.1063/1.3590921
Arakawa T, Sekiguchi K, Nakamura S, Chida K, Nishihara Y, Chiba D et al. Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. Applied Physics Letters. 2011 May 16;98(20). 202103. https://doi.org/10.1063/1.3590921
Arakawa, Tomonori ; Sekiguchi, Koji ; Nakamura, Shuji ; Chida, Kensaku ; Nishihara, Yoshitaka ; Chiba, Daichi ; Kobayashi, Kensuke ; Fukushima, Akio ; Yuasa, Shinji ; Ono, Teruo. / Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. In: Applied Physics Letters. 2011 ; Vol. 98, No. 20.
@article{c5ed58c7c304423e986e4138daf992a1,
title = "Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions",
abstract = "We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200{\%} at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.",
author = "Tomonori Arakawa and Koji Sekiguchi and Shuji Nakamura and Kensaku Chida and Yoshitaka Nishihara and Daichi Chiba and Kensuke Kobayashi and Akio Fukushima and Shinji Yuasa and Teruo Ono",
year = "2011",
month = "5",
day = "16",
doi = "10.1063/1.3590921",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

AU - Arakawa, Tomonori

AU - Sekiguchi, Koji

AU - Nakamura, Shuji

AU - Chida, Kensaku

AU - Nishihara, Yoshitaka

AU - Chiba, Daichi

AU - Kobayashi, Kensuke

AU - Fukushima, Akio

AU - Yuasa, Shinji

AU - Ono, Teruo

PY - 2011/5/16

Y1 - 2011/5/16

N2 - We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

AB - We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

UR - http://www.scopus.com/inward/record.url?scp=79957535832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957535832&partnerID=8YFLogxK

U2 - 10.1063/1.3590921

DO - 10.1063/1.3590921

M3 - Article

AN - SCOPUS:79957535832

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202103

ER -