Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

Tomonori Arakawa, Koji Sekiguchi, Shuji Nakamura, Kensaku Chida, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Akio Fukushima, Shinji Yuasa, Teruo Ono

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19 Citations (Scopus)

Abstract

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

Original languageEnglish
Article number202103
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 2011 May 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Arakawa, T., Sekiguchi, K., Nakamura, S., Chida, K., Nishihara, Y., Chiba, D., Kobayashi, K., Fukushima, A., Yuasa, S., & Ono, T. (2011). Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. Applied Physics Letters, 98(20), [202103]. https://doi.org/10.1063/1.3590921