Submillisecond hyperpolarization of nuclear spins in silicon

Felix Hoehne, Lukas Dreher, David P. Franke, Martin Stutzmann, Leonid S. Vlasenko, Kohei M. Itoh, Martin S. Brandt

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Abstract

In this Letter, we devise a fast and effective nuclear spin hyperpolarization scheme, which is, in principle, magnetic field independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100μs in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of ∼100ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.

Original languageEnglish
Article number117602
JournalPhysical review letters
Volume114
Issue number11
DOIs
Publication statusPublished - 2015 Mar 17

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hoehne, F., Dreher, L., Franke, D. P., Stutzmann, M., Vlasenko, L. S., Itoh, K. M., & Brandt, M. S. (2015). Submillisecond hyperpolarization of nuclear spins in silicon. Physical review letters, 114(11), [117602]. https://doi.org/10.1103/PhysRevLett.114.117602